Pb loss in Pb(Zr,Ti)O3 ceramics observed by <i>in situ</i> ionic conductivity measurements

Donnelly, Niall J.; Randall, Clive A.

doi:10.1063/1.3585831

Cited by 37 publications

(35 citation statements)

References 22 publications

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“…5 Volatilization of PbO is problematic during annealing (600-800 C), and is only partially controlled for thin films through the use of rapid thermal annealing processes. [6][7][8][9] In thin films, PbO control has been achieved either by increasing the PbO content in the deposited film 6 (typically by 5%-20% excess PbO in solutions for solution processing and in targets for physical vapor deposition) or by adding a PbO overcoat after the film has been prepared and heating to diffuse the PbO into the PZT film. 5,10 Excess surface PbO can be removed using an acetic acid wash. 10 In both cases, the PbO content is essentially controlled by kinetics.…”

Section: Introductionmentioning

confidence: 99%

A-site stoichiometry and piezoelectric response in thin film PbZr1−xTixO3

et al. 2015

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Lead zirconate titanate (PZT) films with Zr/Ti ratios of 52/48 and 30/70 annealed at varying partial pressures of PbO within the perovskite phase field exhibited permittivities of 1150 and 600, respectively, with loss tangents of 0.02. Many of the functional properties, including the permittivity, piezoelectricity as indicated via the Rayleigh coefficients, and the aging rates were found to be weakly dependent of the lead content in the single phase field. Minor polarization–electric field hysteresis loops and piezoelectric coefficient e31,f values after a hot poling process suggest that the point defect helps stabilize the aligned domain states. Measurements of the local nonlinear response show an increased low response cluster size with decreasing PbO content, indicating that PbO deficiency acts to reduce domain wall motion where it is already low.

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Section: Introductionmentioning

confidence: 99%

A-site stoichiometry and piezoelectric response in thin film PbZr1−xTixO3

et al. 2015

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“…A more comprehensive study on rare earth doping can be found in [25]. It was also shown that donor doping does not lead to complete annihilation of the p-type conduction behaviour in PZT and furthermore does not entirely suppress the formation of oxygen vacancies [26,27,28,29,30,31]. Oxide ion motion was analysed for undoped and donor doped PZT as well as co-doped PZT with donor excess [32,33,34,35,36].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT)

et al. 2016

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The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La3+ donor-doped, Fe3+ acceptor-doped and La3+/Fe3+-co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

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“…It should be noted that care must be taken to ensure PbO is not driven out of the PZT itself. Measurements of conductivity in PZT ceramics at 700°C have shown an increase in ionic conductivity as a result of the [38]. The presence of oxygen vacancies within the films may ultimately limit the lifetime of the actuators.…”

Section: Resultsmentioning

confidence: 99%

Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics

et al. 2013

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Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.

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Pb loss in Pb(Zr,Ti)O3 ceramics observed by in situ ionic conductivity measurements

Cited by 37 publications

References 22 publications

A-site stoichiometry and piezoelectric response in thin film PbZr1−xTixO3

A-site stoichiometry and piezoelectric response in thin film PbZr1−xTixO3

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT)

Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics

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