Pb+ implanted SiO2 probed by soft x-ray emission and absorption spectroscopy

Zatsepin, D. A.; Hunt, Adrian; Moewes, A.; Kurmaev, E.Z.; Гаврилов, Н. М.; Cholakh, S. O.

doi:10.1016/j.jnoncrysol.2011.06.005

Cited by 6 publications

(4 citation statements)

References 19 publications

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“…The spectra of the implanted samples fall somewhere between the extremes: Sn implanted a-SiO 2 shows a prominent peak in the pre-edge of a spectrum (at~532.5 eV) which is otherwise similar to pure a-SiO 2 , while Pb implanted extita-SiO 2 is almost identical to that of pure a-SiO 2 , with only minor spectral weight in the pre-edge region. Note that the similarity of the XAS for Pb implanted a-SiO 2 and the reference a-SiO 2 has already been briefly noted in an earlier study which revealed a lack of PbO 4 tetrahedra in the samples [22].…”

Section: Resultssupporting

confidence: 76%

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

Green¹,

Hunt²,

Zatsepin³

et al. 2012

Journal of Non-Crystalline Solids

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The electronic structures of Sn and Pb implanted SiO 2 are studied using soft X-ray absorption (XAS) and emission (XES) spectroscopy. We show, using reference compounds and ab initio calculations, that the presence of Pb\O and Sn\O interactions can be detected in the pre-edge region of the oxygen K-edge XAS. Via analysis of this interaction-sensitive pre-edge region, we find that Pb implantation results primarily in the clustering of Pb atoms. Conversely, with Sn implantation using identical conditions, strong Sn\O interactions are present, showing that Sn is coordinated with oxygen. The varying results between the two ion types are explained using both ballistic considerations and density functional theory calculations. We find that the substitution of Pb into Si sites in SiO 2 requires much more energy than substituting Sn in these same sites, primarily due to the larger size of the Pb ions. From these calculated formation energies it is evident that Pb requires far higher temperatures than Sn to be soluble in SiO 2 . These results help explain the complex processes which take place upon implantation and determine the final products.

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Section: Resultssupporting

confidence: 76%

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

Green¹,

Hunt²,

Zatsepin³

et al. 2012

Journal of Non-Crystalline Solids

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“…This is clear if one compares it to the onset of the O K-edge of SiO 2 in Ref. 33, in which there are no electronic states in the suppressed region.…”

Section: B Xas and Rxes Measurementsmentioning

confidence: 76%

Structural defects induced by Fe-ion implantation in TiO2

Leedahl

Zatsepin

Boukhvalov

et al. 2014

Journal of Applied Physics

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X-ray photoelectron spectroscopy (XPS) and resonant x-ray emission spectroscopy (RXES) measurements of pellet and thin film forms of TiO 2 with implanted Fe ions are presented and discussed. The findings indicate that Fe-implantation in a TiO 2 pellet sample induces heterovalent cation substitution (Fe 2+ → Ti 4+ ) beneath the surface region. But in thin film samples, the clustering of Fe atoms is primarily detected. In addition to this, significant amounts of secondary phases of Fe 3+ are detected on the surface of all doped samples due to oxygen exposure. These experimental findings are compared with density functional theory (DFT) calculations of formation energies for different configurations of structural defects in the implanted TiO 2 :Fe system. According to our calculations, the clustering of Fe-atoms in TiO 2 :Fe thin films can be attributed to the formation of combined substitutional and interstitial defects. Further, the differences due to Fe doping in pellet and thin film samples can ultimately be attributed to different surface to volume ratios.

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“…This work is a continuation of an extensive study (e.g. [10][11][12][13]) of d-metal implantation in glassy materials and their electronic structure.…”

Section: Introductionmentioning

confidence: 95%

Structural ordering in a silica glass matrix under Mn ion implantation

Zatsepin¹,

Green²,

Hunt³

et al. 2012

J. Phys.: Condens. Matter

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Mn(+)-implanted, amorphous SiO(2) samples were synthesized using pulsed-ion implantation without thermal annealing. The crystal and electronic structures have been studied using x-ray diffraction and synchrotron-based soft x-ray absorption and emission spectroscopy at the Si and Mn L(2,3) edges. We find a combination of small MnO clusters and Si crystallites at shallow depths while tetrahedral Mn coordination is found deeper in the host target. Through a combination of techniques, we find that the implantation process simultaneously decreases the long-range order in the near-surface region and increases order deeper in the SiO(2) host. Our results suggest Mn substitution into Si sites at deep levels catalyzes the formation of α-quartz, providing insight into the complex interactions that determine the local structure around the impurities as well as the overall changes to the crystallinity of implanted SiO(2).

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Pb+ implanted SiO2 probed by soft x-ray emission and absorption spectroscopy

Cited by 6 publications

References 19 publications

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

Structural defects induced by Fe-ion implantation in TiO2

Structural ordering in a silica glass matrix under Mn ion implantation

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