Patterning of organic thin film transistors by oxygen plasma etch

Abstract

All applications of organic thin film transistors require patterning of the organic thin film to achieve a low off current and to prevent cross talk between neighboring transistors. A common method for patterning consists of using a protective layer and etching the uncovered small molecule film by oxygen plasma. One of the handicaps of this process is the observed degradation of the transistor characteristics. By varying the resist overlap, the authors show that the main cause of this performance degradation is, in fact, a far-reaching underetch of the oxygen plasma which can be overcome by choosing the right geometry of the resist pattern.

Oxygen glow discharge cleaning in nuclear fusion devices

“…The erosion of carbon in oxygen plasmas is a standard method for etching processes in semiconductor fabrication [11][12][13] as well as the cleaning of surfaces from carbon impurities [14,15]. Landkammer et al [16,17] and Jacob et al [6] systematically studied the erosion of amorphous hydrocarbon films (a-C:H) in oxygen plasmas.…”

Chemical sputtering of carbon films by argon ions and molecular oxygen at cryogenic temperatures

“…Examples of applications are patterning processes in microelectronics fabrication [1][2][3], the removal of diffusionbarrier carbon coatings on polyethylene terephthalate bottles prior to recycling [4], and the cleaning of optical components in synchrotron beamlines [5]. More recently it has also attracted considerable attention for the removal of redeposited hydrocarbon films in magnetic-confinement nuclear fusion experiments [6][7][8][9][10][11][12].…”

Fuel removal from tile gaps with oxygen discharges: reactivity of neutrals

“…Although removal of carbonaceous films by oxygen glow discharges is a standard tool in technological processes (see, e.g., [17][18][19]) little is known about the reactivity of individual species formed in oxygen-containing low-temperature plasmas as well as their specific role in the erosion process. It is known from laboratory experiments, that the ion energy as well as the substrate temperature significantly influence the erosion rate.…”