Patterning of ferroelectric nanodot arrays using a silicon nitride shadow mask

Shin, Hyung‐Joon; Choi, Je Hyuk; Yang, Hee Jun; Park, Young Dae; Kuk, Young; Kang, Chi Jung

doi:10.1063/1.2048818

Cited by 33 publications

(26 citation statements)

References 20 publications

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“…On the other hand, if it is carefully tailored and preengineered into the system, it can help to improve device switching speeds. 4 Importantly, for spintronics and memory applications, it can also be used to create patterned ferroelectric storage media 5 or even artificial multiferroics [6][7][8][9] when combined with magnetic materials.…”

Section: Introductionmentioning

confidence: 99%

Interface-mediated ferroelectric patterning and Mn valency in nano-structured PbTiO3/La0.7Sr0.3MnO3

Krug

Doğanay

Nickel

et al. 2016

Journal of Applied Physics

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We employed a multitechnique approach using piezo-force response microscopy and photoemission microscopy to investigate a self-organizing polarization domain pattern in PbTiO3/La0.7Sr0.3MnO3 (PTO/LSMO) nanostructures. The polarization is correlated with the nanostructure morphology as well as with the thickness and Mn valence of the LSMO template layer. On the LSMO dots, the PTO is upwards polarized, whereas outside the nanodots, the polarization appears both strain and interface roughness dependent. The results suggest that the electronic structure and strain of the PTO/LSMO interface contribute to determining the internal bias of the ferroelectric layer.

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Section: Introductionmentioning

confidence: 99%

Interface-mediated ferroelectric patterning and Mn valency in nano-structured PbTiO3/La0.7Sr0.3MnO3

Krug

Doğanay

Nickel

et al. 2016

Journal of Applied Physics

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“…[1][2][3][4][5][6][7] Efforts have been made by a number of research groups to realize this goal by nanoscaling ferroelectric materials using different 'top-down' and 'bottom-up' approaches. 3,[8][9][10] Fabrication of two dimensional (2D) arrays of ferroelectric nanoislands or nanodots is an ideal approach for forming isolated nanodomains, where the individual units can store physically separate bits of data.…”

Section: Introductionmentioning

confidence: 99%

“…[16][17][18]22 Templateassisted synthesis is a simplistic low-cost route for fabricating ferroelectric nanodots, due to the number of deposition methods that can be utilized and good control over the dimensions of the nanostructures formed. 7,11,[19][20][21] For example, Lee et al 3 fabricated individually addressable epitaxial arrays of PZT nanodot capacitors (~ 60 nm in diameter and ~ 20 to 40 nm in height) with a density of 32 Gb cm -2 using anodic aluminium oxide (AAO) templates. However, the use of AAO as a template is limited, due to the difficulty in forming membranes on desired substrates and typically poor ordering at low dimensions (< 50 nm).…”

Section: Introductionmentioning

confidence: 99%

“…3,5,6,8,11 Isolated singlecrystalline ferroelectric nanostructures have shown improved memory characteristics such as high polarization retention compared to their thin film counterparts, due to the presence of single ferroelectric domains, 11 and increased electromechanical displacement due the reduction of clamping effects on 90 degree domain reorientation. 12 Techniques such as electron beam lithography, 5,6 focused ion beam milling, 12 nanoimprint lithography, 13,14 dip-pen lithography, 15 sol-gel selfassembly [16][17][18] and templating 7,11,[19][20][21] have been used successfully to fabricate arrays of discrete nanoislands or dots. Although 'top-down' lithography-based techniques have been successful in making precisely positioned ferroelectric nanodots, their inherent feature-size limitations, low throughput and high processing cost makes these techniques less prevalent.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Arrays of Lead Zirconate Titanate (PZT) Nanodots via Block Copolymer Self-Assembly

et al. 2013

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Access to the full text of the published version may require a subscription. Rights KEYWORDS : PZT, Block copolymer, PFM, nanodot, piezoelectricABSTRACT: This article presents a simple methodology for the fabrication of two dimensional arrays of lead zirconate titanate (PZT) nanodots on n-doped Si substrates via the directed self-assembly of PS-b-PEO block copolymer templates. The approach produces highly ordered PZT nanodot patterns, with lateral widths and heights as small as 20 and 10 nm respectively, and a coverage density as high as ~ 68 × 10 9 nanodots cm -2 . The existence of a pervoskite phase in the nanodots was confirmed by X-ray diffraction and X-ray photoelectron spectroscopy. The piezo-amplitude and ferroelectric domain response obtained from the nanodots, through piezoresponse force microscopy, confirmed the presence of ferroelectricity in the PZT arrays. Notably, PZT nanodots with a thickness ~ 10 nm, which is close to the critical size limit of PZT, showed ferroelectric behavior. The presence of a multi-a/c domain structure in the nanodots was attributed to their polycrystalline nature.

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“…Camadas de SiO 2 crescidas termicamente, com espessuras de ~2 µm e bastante compactas [17], são utilizadas como máscara em processos de corrosão anisotrópica profundas, sendo consumido moderadamente quando entra em contato com uma solução contendo KOH [12]. Camadas de Si 3 N 4 não são consumidas em soluções com KOH, porém apresentam um grau de estresse que pode comprometer a estrutura final.…”

Section: A Escolha Das Etapas De Processo E Do Materials Da Máscara Paunclassified

Fabricação de canaletas em substratos de silício para acoplamento fibra-guia utilizando siliceto de níquel como material de máscara.

Mascaro¹

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AgradecimentosAo professor Nilton Itiro Morimoto pela orientação, apoio e confiança demonstrada ao longo do trabalho.Ao Dr. Luiz Carlos Donizetti Gonçalves pela ajuda sempre presente, contribuindo diretamente para a elaboração deste trabalho.Ao Laboratório de Sistemas Integráveis da Escola Politécnica de São Paulo pela infraestrutura disponibilizada ao longo do trabalho.Aos amigos do grupo LSI-EPUSP, LME-EPUSP e CCS-UNICAMP pela colaboração, atenção e solidariedade dispensadas durante a elaboração do trabalho.Ao CNPq pelo apoio financeiro por um período desta pesquisa.À minha mãe pelo desprendimento financeiro e de tempo permitindo que eu tivesse formação técnica e pessoal para aproveitar essa oportunidade, além do incentivo constante para alcançar esse objetivo.A todas as pessoas que colaboraram para a realização, seja com um sorriso, uma palavra de ânimo, ou um olhar, seja voluntariamente ou não, deixo aqui o meu agradecimento. ResumoNeste trabalho, apresentamos um novo processo de fabricação para a obtenção de canaletas em V em substratos de silício monocristalino (100) para um acoplamento óptico utilizando siliceto de níquel como material de máscara. O filme de siliceto de níquel (10nm de espessura para 200 nm de nickel) foi obtido por processos de evaporação térmica e posterior recozimento a baixas temperaturas ( 200 e 250°C). As canaletas em V (com profundidade de 60 µm) foram fabricadas através do processo de corrosão anisotrópica, utilizando uma solução de KOH (27%-60°C). Durante este processo, a taxa de corrosão do substrato de silício pela solução de KOH foi estimada como sendo 33.1 µm/h. A composição da camada de siliceto de níquel obtida foi investigada utilizando a técnica RBS, que nos forneceu a estequiometria Ni 2 Si. A rugosidade de filmes de níquel e de Ni 2 Si foi medida pela técnica AFM. Uma análise SEM foi feita com as canaletas e guias de onda obtidos. Após o processamento das canaletas em V, elas foram alinhadas com um guia de onda simples de teste para um futuro acoplamento óptico. AbstractIn this work, we present a new fabrication process to obtain V-grooves on monocrystaline silicon substrates (100) for optical coupling using nickel silicides as mask material. The nickel silicide film 10 nm thick for 200 nm of nickel thick) was obtained using thermal evaporation and annealing processes at low temperatures (200 and 250°C) as mask for alkaline solutions. Vgrooves (60 µm deep) were fabricated by anisotropic etching process, using a KOH (27%-60°) solution. During this process, the etch rate of the silicon substrate by the KOH solution was measured as 33.1 µm/h. The composition of the obtained nickel silicide layer was investigated using RBS technique, which supplied us the stoichiometric Ni 2 Si. The roughness of nickel and Ni 2 Si layers was measured by AFM technique. A SEM analysis was made with the obtained Vgrooves and waveguides..After processing the V-grooves, they were aligned with a simple waveguide for a future optical coupling.

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Patterning of ferroelectric nanodot arrays using a silicon nitride shadow mask

Cited by 33 publications

References 20 publications

Interface-mediated ferroelectric patterning and Mn valency in nano-structured PbTiO3/La0.7Sr0.3MnO3

Interface-mediated ferroelectric patterning and Mn valency in nano-structured PbTiO3/La0.7Sr0.3MnO3

Fabrication of Arrays of Lead Zirconate Titanate (PZT) Nanodots via Block Copolymer Self-Assembly

Fabricação de canaletas em substratos de silício para acoplamento fibra-guia utilizando siliceto de níquel como material de máscara.

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