Patterning method for silicides based on local oxidation

Mantl, S.; Dolle, M.; Mesters, S.; Fichtner, P.F.P.; Bay, H.L.

doi:10.1063/1.115246

Cited by 26 publications

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“…We have recently shown that local oxidation of silicides (LOCOSI) can be used to obtain deep submicrometrepatterned structures with standard optical lithography [55]. The principle is sketched in figure 18.…”

Section: A New Methods For Silicide Patterningmentioning

confidence: 99%

Molecular beam allotaxy: a new approach to epitaxial heterostructures

Mantl

1998

J. Phys. D: Appl. Phys.

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The present status of a new epitaxial growth method, named molecular beam allotaxy (MBA), is reviewed. The method allows one to grow single-crystalline heterostructures in a new way; that is, the desired layer forms during annealing of a precipitate layer. The precipitates are embedded within a single-crystalline matrix, grown by molecular beam epitaxy. The key point is that the epitaxial growth of the matrix persists from the substrate through the spacings between the inclusions to the overlayer. The precipitates coarsen and coalesce into a uniform layer during a subsequent high-temperature treatment, the second processing step. We discuss the present theoretical model of the layer formation during annealing which is based on inhomogeneous Ostwald ripening and particle coalescence. We place particular emphasis on the growth of precipitates in single-crystalline silicon, since MBA is based on precipitate growth and these nanoparticles exhibit interesting phenomena, such as self-ordering. We discuss the influence of the growth parameters on the layer quality and provide optimized growth and annealing parameters. MBA has been used so far mainly for the growth of epitaxial silicide heterostructures. The metallic disilicide CoSi 2 on Si(100) serves as a model system because of its interesting material properties and its potential for microelectronic and optoelectronic applications. The structural and electrical properties of the obtained epitaxial Si/CoSi 2 /Si(100) heterostructures are reviewed. We also discuss the growth of a ternary silicide, Co 1−y Pd y Si 2 , showing that MBA can be applied also for ternary compounds. We see a great potential in the semiconducting silicides β-FeSi 2 and Ru 2 Si 3 , which can be grown by MBA. As a further test of the MBA method we investigated the growth of a buried SiO x layer in Si(100). The use of epitaxial silicides as compliant substrates and as building blocks for new microelectronic and optoelectronic devices is briefly reviewed.

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Section: A New Methods For Silicide Patterningmentioning

confidence: 99%

Molecular beam allotaxy: a new approach to epitaxial heterostructures

Mantl

1998

J. Phys. D: Appl. Phys.

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“…However, even though this specific Si deficiency cannot be justified, compensation at the initial stage of the reaction by lattice diffusion of Co through the CoSi 2 layer toward the Si substrate is doubtful below 950°C. 32,34 …”

Section: B Thermal Stability Of Epitaxial Cosi 2 and The Mechanism Omentioning

confidence: 99%

On the formation of inhomogeneities in epitaxial CoSi2 layers grown from the interaction of Co/Ti bilayers with Si 〈100〉 substrates

Cardenas

Zhang

Svensson

et al. 1996

Journal of Applied Physics

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The redistribution of titanium during the formation of epitaxial CoSi 2 , grown from the reaction of Co͑20 nm͒/Ti͑10 nm͒ bilayers with Si ͗100͘, has been investigated. Annealing of Co/Ti/Si structures, at temperatures between 850 and 1050°C, is shown to be associated with the growth of an inhomogeneous CoSi 2 layer having Ti-rich surface layer͑s͒ on top. The formation of inhomogeneities in the CoSi 2 layer is conclusively attributed to the presence of Ti-rich surface layer͑s͒. It is shown that smooth and morphologically stable CoSi 2 layers can be grown by removing these surface layers followed by a high-temperature treatment in nitrogen atmosphere. We propose that the underlying mechanism for the inhomogeneity formation within the CoSi 2 layer is a nucleation-controlled process, induced by an anticipated reaction between the CoSi 2 layer and Ti-rich phases near the surface.

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“…Recently it has been shown that local oxidation of thin epitaxial CoSi 2 films is a new versatile method for producing silicide nanostructures. [9][10][11][12][13] For applications in microelectronic devices the interfacial roughness and the homogeneity of the layer systems is of great importance. Since the oxidation process may alter these properties drastically, a study of samples in different stages of oxidation was necessary.…”

Section: Introductionmentioning

confidence: 99%

Structural characterization of oxidized allotaxially grown CoSi2 layers by x-ray scattering

Kaendler

Seeck

Schlomka

et al. 2000

Journal of Applied Physics

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A series of buried CoSi 2 layers prepared by a modified molecular beam epitaxy process ͑allotaxy͒ and a subsequent wet-oxidation process was investigated by x-ray scattering. The oxidation time which determines the depth in which the CoSi 2 layers are located within the Si substrates has been varied during the preparation. The electron density profiles and the structure of the interfaces were extracted from specular reflectivity and diffuse scattering measurements. Crystal truncation rod investigations yielded the structure on an atomic level ͑crystalline quality͒. It turns out that the roughness of the CoSi 2 layers increases drastically with increasing oxidation time, i.e., with increasing depth of the buried layers. Furthermore, the x-ray data reveal that the oxidation growth process is diffusion limited.

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Patterning method for silicides based on local oxidation

Cited by 26 publications

References 0 publications

Molecular beam allotaxy: a new approach to epitaxial heterostructures

Molecular beam allotaxy: a new approach to epitaxial heterostructures

On the formation of inhomogeneities in epitaxial CoSi2 layers grown from the interaction of Co/Ti bilayers with Si 〈100〉 substrates

Structural characterization of oxidized allotaxially grown CoSi2 layers by x-ray scattering

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