Patterning graphene with a helium ion microscope: Observation of metal-insulator transition induced by disorder

Araújo, Eduardo Nery Duarte de; Brant, J. C.; Archanjo, Bráulio S.; Medeiros‐Ribeiro, G.; Plentz, F.; Alves, Endrigo Gabellini Leonel

doi:10.1103/physrevb.91.245414

Cited by 12 publications

(6 citation statements)

References 35 publications

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“…As can be seen from a comparison of the characteristic times τ ϕ,i, * and fields B ϕ,i, * included in relation (2) for the processes of inelastic and quasi-elastic scattering of charge carriers, they are almost the same for the contributions due to the violation of chirality and warping (τ * ≈ τ w and B * ≈ B w ), while the characteristic parameters of phase breaking for weak localization and intervalley scattering are significantly different, but always τ i < τ ϕ and B ϕ > B i . Note also that, in the studied temperature and magnetic field ranges, the values of all parameters in Table 2, which are involved in the quantum correction model, are very similar to those given in the literature for other graphene types [34,35]. This indicates the adequacy of our description of the experimental R (B) curves by the quantum correction model, at least for the NMR effect region.…”

Section: Resultssupporting

confidence: 81%

Sheet Resistance and Magnetoresistance in Polycrystalline CVD Graphenes

Fedotov

Харченко

Gumiennik

et al. 2022

Physics of the Solid State

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Temperature and magnetic field dependencies of sheet resistance R#(T,B) in polycrystalline CVD graphene, investigated in the range of 2≤ T≤ 300 K and magnetic fields 0≤ B≤ 8 T, allowed to determine carrier transport mechanisms in single-layered and twisted CVD graphene. It is shown that for R#(T,B) curves for such samples are described by the interference quantum corrections to the Drude conductivity independently on type of precursor and peculiarities of graphene transfer from Cu foil onto the various substrates (glass or SiO2). The twisted CVD graphene samples have demonstrated additional contribution of 2D hopping conductivity into the R#(T,B) dependencies. Keywords: graphene, single layer, twisted layers, CVD, carrier transport, magnetoresistance.

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Section: Resultssupporting

confidence: 81%

Sheet Resistance and Magnetoresistance in Polycrystalline CVD Graphenes

Fedotov

Харченко

Gumiennik

et al. 2022

Physics of the Solid State

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“…The HIM has shown potential to pattern and selectively introduce defects with high resolution into 2D materials such as MoS 2 , MoSe 2 , WSe 2 , and graphene . Of particular interest, transition metal dichalcogenide (TMD) nanoribbons have been theorized to exhibit unique properties depending upon edge termination .…”

Section: Introductionmentioning

confidence: 99%

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

et al. 2017

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A gas‐assisted focused‐helium‐ion beam‐induced etching (FIBIE) process is introduced, which accelerates direct‐write patterning of WSe2 relative to standard ion milling. The etching process utilizes the XeF2 precursor molecule to provide a chemical assist for enhanced material removal relative to ion sputtering. The FIBIE process enables high‐fidelity patterning of WSe2 with doses 5× lower than standard He+ milling. This enables the formation of high‐resolution WSe2 nanoribbons with dimensions less than 10 nm. The WSe2 nanoribbons demonstrate high Raman anisotropy and nanoribbon electrical measurements are reported for the first time. The normalized on‐currents of field‐effect transistors reveal that the electron and hole currents are both suppressed and scale with the nanoribbon width, with the electron transport experiencing more degradation. However, on‐currents of nanoribbons created by the FIBIE process remain orders of magnitude greater than nanoribbons formed by standard He+ milling. Scanning transmission electron microscopy and complementary Monte Carlo ion–solid simulations reveal that the reduced currents are partially due to ion‐induced damage in the WSe2.

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“…However, damage is relative and the threshold doses to be applied depend on the particular experiment proposed. For example, elsewhere, irradiation of narrow stripe patterns into supported graphene using doses of 10 13 ions/cm 2 was shown to create enough disorder to induce a transition from metallic to insulator behavior [ 148 ]. A possible strategy to mitigate the beam damage of graphene in helium FIB milling applications involves encapsulating the graphene between flakes of hBN [ 149 ].…”

Section: Reviewmentioning

confidence: 99%

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

Allen¹

2021

Beilstein J. Nanotechnol.

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The helium ion microscope has emerged as a multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This paper reviews the materials modification research that has been enabled by the helium ion microscope since its commercialization in 2007, ranging from fundamental studies of beam–sample effects, to the prototyping of new devices with features in the sub-10 nm domain.

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Patterning graphene with a helium ion microscope: Observation of metal-insulator transition induced by disorder

Cited by 12 publications

References 35 publications

Sheet Resistance and Magnetoresistance in Polycrystalline CVD Graphenes

Sheet Resistance and Magnetoresistance in Polycrystalline CVD Graphenes

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

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