International Conference onIndium Phosphide and Related Materials, 2003.
DOI: 10.1109/iciprm.2003.1205348
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Patterning effect at 40 Gbit/s of wavelength converter utilizing cross-phase modulation in InGaAsP/InP electroabsorption modulator

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Cited by 6 publications
(4 citation statements)
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“…An EAM possesses faster absorption recovery time (i.e., less than 10 ps) and also experiences reduced chirp on the output signal (ideally zero or negative) as compared to other optical devices (e.g., semiconductor optical amplifiers) [20][21][22][23]. Furthermore, it has been suggested that an EAM is (theoretically) capable of handling tera-hertz modulation rates [24].…”
Section: Introductionmentioning
confidence: 97%
“…An EAM possesses faster absorption recovery time (i.e., less than 10 ps) and also experiences reduced chirp on the output signal (ideally zero or negative) as compared to other optical devices (e.g., semiconductor optical amplifiers) [20][21][22][23]. Furthermore, it has been suggested that an EAM is (theoretically) capable of handling tera-hertz modulation rates [24].…”
Section: Introductionmentioning
confidence: 97%
“…Chirp control of EAM is desirable for high-speed optical networks where chirp compensation before the demultiplexing can make the network more robust [7]. The occurrence of chirp in an EAM is a mainly dependent on the bias voltage [15] and an optimised value of the bias voltage can improve the performance of the device so that it exhibits negative or zero chirp.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, various optical network applications such as very-short-reach, long-reach and long-haul network functionalities [2] based on cross-absorption modulation (XAM) have been demonstrated, that include pulse generation [3], multiplexing [4] and demultiplexing [5]. EAMs are considered as suitable devices for optical networking applications as they possess fast absorption recovery that can be less than 10 ps [6] as compared to the slow gain recovery of the semiconductor optical amplifiers [7]. Such high-speed operation is required for optical regeneration with simultaneous wavelength conversion.…”
Section: Introductionmentioning
confidence: 99%
“…All-optical implementation of wavelength conversions is very promising due to its ability of ultrahigh-speed operations. So far, several schemes have been reported to realize all-optical wavelength conversions by exploiting optical nonlinearities in, for example, semiconductor optical amplifiers (SOAs) [3,5,6], electro-absorption modulators (EAMs) [7], periodically poled lithium niobate (PPLN) waveguide [8], chalcogenide glass rib waveguide [9,10], passive GaAs-AlGaAs waveguide [11], Si nanowire [12,13] and various optical fibers [1,[14][15][16][17][18][19][20][21][22], respectively. Nevertheless, these schemes can have their individual advantages and also have their respective drawbacks in terms of operational speed, wavelength range, manufacturing cost, system complexity and physical size of the resulting wavelength converters.…”
Section: Introductionmentioning
confidence: 99%