2021
DOI: 10.1039/d1ra04982h
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Patterning 2D materials for devices by mild lithography

Abstract: Mild lithography allows patterning of 2D materials while minimizing processing-induced defects. Thus, their structural integrity and intrinsic properties are preserved.

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Cited by 6 publications
(4 citation statements)
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References 63 publications
(92 reference statements)
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“…[30][31][32] However, not only do residues of the used resist and other chemicals that are involved in the patterning process result in a reduced device performance, moreover can especially electron beam irradiation lead to significant changes inside the material, such as doping or the previously mentioned phase transitions. [26,27,[33][34][35][36][37] Apart from the conventional electron beam lithography-based nanopatterning, atomic force microscopy (AFM) is widely used to determine the actual number of atomic layers present in the investigated 2D nanosheet. Knowing this thickness is crucial, since one of the most distinct features of van der Waals materials is the thickness-dependent bandgap.…”
Section: Introductionmentioning
confidence: 99%
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“…[30][31][32] However, not only do residues of the used resist and other chemicals that are involved in the patterning process result in a reduced device performance, moreover can especially electron beam irradiation lead to significant changes inside the material, such as doping or the previously mentioned phase transitions. [26,27,[33][34][35][36][37] Apart from the conventional electron beam lithography-based nanopatterning, atomic force microscopy (AFM) is widely used to determine the actual number of atomic layers present in the investigated 2D nanosheet. Knowing this thickness is crucial, since one of the most distinct features of van der Waals materials is the thickness-dependent bandgap.…”
Section: Introductionmentioning
confidence: 99%
“…[ 30–32 ] However, not only do residues of the used resist and other chemicals that are involved in the patterning process result in a reduced device performance, moreover can especially electron beam irradiation lead to significant changes inside the material, such as doping or the previously mentioned phase transitions. [ 26,27,33–37 ]…”
Section: Introductionmentioning
confidence: 99%
“…Various approaches exist for strain engineering in 2D materials. One method involves lithographic patterning [ 17 ] of stressed thin films to selectively induce tension, compression, uniaxiality, and biaxiality relative to crystal axes. Additionally, novel experimental methods have been developed to overcome the limitations of traditional bulk mechanical testing for atomically thin structures [ 18 , 19 ].…”
Section: Introductionmentioning
confidence: 99%
“…A recent experiment has reported signatures of isolated flat bands and correlated states in buckled graphene on NbSe 2 . In addition to spontaneous buckling effects, periodic strain/deformations can also be achieved by thermal treatments, pressure, mechanical manipulation, and deposition of the material on patterned substrates with controlled designs. In these scenarios, the emergent superlattice structure imposes new constraints on the electron dynamics, akin to those produced in the twisted bilayer configuration.…”
mentioning
confidence: 99%