Patterned growth of ZnO nanorod by solution chemical method

Abstract

A simple method has been developed for the controlled patterned growth of the ZnO nanorod arrays with different size and shape on substrate. In order to control the position of the ZnO nanorods, exposed ZnO seed is defined, as orderly aligned arrays, with the assistance of photolithography. This technique hinges on the patterning of the seed layer comprised by ZnO sol-gel precursor. The simple way to create patterned ZnO seed array is to use negative photoresist for ZnO seed coating. The UV exposures were performed though mask patterned various shape. The ZnO arrays are synthesized using solution chemical method at normal atmospheric pressure without any metal catalyst. A simple twostep process is developed for ZnO nanorod on substrate at 90 o C. The ZnO seed precutsor is prepared by sol-gel process. The ZnO nanorod is grown by solution chemical method. The ZnO nanorod growth was dependent on the ZnO seed layer. The ZnO nanorods have length of 400~500nm and diameter of 25~50nm. The ZnO nanorod is single crystals with wurtzite and grows along the c axis of the crystal plane. The room temperature photoluminescence measurements have shown ultraviolet peaks 378.3nm (3.27eV) with high intensity.

Towards Direct Fabrication of Functional Patterns on Large-Area Substrates for Flexible Devices

“…Additionally, it has been used to remove a seed-layer by depositing a photoresist and removing the desired pattern, then depositing the seed-layer and stripping away the rest of the photoresist leaving the desired pattern [61]. A major problem with this is that growth may still occur in the non-seed-layer areas.…”