2024
DOI: 10.1002/adfm.202316265
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Patterned Chiral Perovskite Film for Self‐Driven Stokes Photodetectors

Chao Wang,
Guoyi Li,
Zhipeng Dai
et al.

Abstract: Polarization detection plays an essential role in a wide range of fields, including target identification, 3D reconstruction, and robotic vision. Self‐driven on‐chip full‐Stokes photodetectors are urgently required to meet the trend of miniaturization and integration. Nevertheless, how to fulfill efficient circular and linear polarimetry simultaneously with sufficient recognition effectiveness in a compact device is a great challenge. Herein, a patterned chiral perovskite film is fabricated by imprinting strat… Show more

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“…Nanowires with predictable and controllable optoelectrical properties can be rationally constructed by complex compositional modulated processes, for example, multistep ion exchange, , ion doping, and restricted phase transformation process. ,, So far, a large number of semiconductor heterojunction nanowires have been reported, not only for traditional group II–VI and III–V semiconductors but also for the freshly emerged promising perovskite materials. Some examples include CdSe–ZnSe heterostructure nanowires, CdS/CdS:SnS 2 superlattice nanowires, CdS–Ag 2 S superlattice nanorods, Si-SiGe superlattice nanowires, GaAs-GaP superlattice structures, GaAs/GaAsSb nanowires superlattice, InAs–InP heterostructures, etc.…”
Section: Introductionmentioning
confidence: 99%
“…Nanowires with predictable and controllable optoelectrical properties can be rationally constructed by complex compositional modulated processes, for example, multistep ion exchange, , ion doping, and restricted phase transformation process. ,, So far, a large number of semiconductor heterojunction nanowires have been reported, not only for traditional group II–VI and III–V semiconductors but also for the freshly emerged promising perovskite materials. Some examples include CdSe–ZnSe heterostructure nanowires, CdS/CdS:SnS 2 superlattice nanowires, CdS–Ag 2 S superlattice nanorods, Si-SiGe superlattice nanowires, GaAs-GaP superlattice structures, GaAs/GaAsSb nanowires superlattice, InAs–InP heterostructures, etc.…”
Section: Introductionmentioning
confidence: 99%