Patterned aluminum nanowires produced by electron beam at the surfaces of AlF3 single crystals

Abstract

Cubic-and rectangular-shape single crystals of a-AlF 3 in sizes of 5 -50 mm have been synthesized by a solid -vapor phase process. Using the electron beam induced decomposition of AlF 3 , a method is demonstrated for fabricating patterned aluminum nanowires in AlF 3 substrate in a scanning electron microscope. By controlling the accelerating voltage, the beam current and scanning time, it is possible to fabricate metallic nanowires of different sizes. The aluminum nanowires may act as nanointerconnects for nanoelectronics. This work demonstrates a potential technique for e-beam nanofabrication. q

Mechanistic Consideration of Fluoride Removal Using Aluminum Sulfate

“…The peaks in Fig. 5 (b) were derived from aluminum fluoride, because these peaks accorded with the XRD spectrum of aluminum fluoride reported by Peter et al (2001) and Ma et al (2004). These indicate that the aluminum precipitate was composed of amorphous materials and did not contain crystalline ones.…”

Large-Scale Synthesis of Six-Nanometer-Wide ZnO Nanobelts

“…Quasi-one-dimensional (1D) nanostructures, such as nanobelts and nanowires, have recently attracted a lot of research interest due to their unique properties and wide range of applications. A wide range of techniques have been developed for the synthesis of 1D nanostructures, including solid−vapor deposition, − lithography, laser ablation, sol−gel, and template-assisted methods; , and nanowires and nanobelts with sizes in the range of 10−100 nm have been synthesized. In general, it is believed that nanowires less than 10 nm will have novel and unique physical and chemical properties due to quantum confinement.…”

Thermally Annealed Sub‐Monolayers of AlF3 on Cu(100): An STM and XPS Study

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] The interest on this material has been boosted by its potential applications in nanometer-scale patterning due to the radiolysis observed under electron irradiation, that is the desorption of fluoride with the consequent formation of an aluminum metallic layer. [3,[9][10][11][12][13][14] This approach has shown its potentiality to build aluminum nanowires on bulk AlF 3 substrates, which might be used as nanointerconnectors of electronic devices. [14] The early growth stages of AlF 3 on Cu (100) have been studied by a combination of surface science techniques, including: thermal energy atom scattering (TEAS), [1] scanning tunneling microscopy (STM), [1][2][3] scanning tunneling spectroscopy (STS), [4] low-energy electron diffraction (LEED), [1] Auger electron spectroscopy (AES), [1,9] electron energy loss spectroscopy (EELS), [1] secondary electron emission (SEE), [1] and direct recoiling spectroscopy with time of flight analysis (TOF-DRS).…”

“…[3,[9][10][11][12][13][14] This approach has shown its potentiality to build aluminum nanowires on bulk AlF 3 substrates, which might be used as nanointerconnectors of electronic devices. [14] The early growth stages of AlF 3 on Cu (100) have been studied by a combination of surface science techniques, including: thermal energy atom scattering (TEAS), [1] scanning tunneling microscopy (STM), [1][2][3] scanning tunneling spectroscopy (STS), [4] low-energy electron diffraction (LEED), [1] Auger electron spectroscopy (AES), [1,9] electron energy loss spectroscopy (EELS), [1] secondary electron emission (SEE), [1] and direct recoiling spectroscopy with time of flight analysis (TOF-DRS). [9] It has also been studied by DFT calculations, [4] as well as predicted by means of kinetic Monte Carlo (KMC) simulations.…”

“…In particular, aluminum fluoride (AlF 3 ) thin-films have been both of fundamental and technological importance for more than three decades. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] The interest on this material has been boosted by its potential applications in nanometer-scale patterning due to the radiolysis observed under electron irradiation, that is the desorption of fluoride with the consequent formation of an aluminum metallic layer. [3,[9][10][11][12][13][14] This approach has shown its potentiality to build aluminum nanowires on bulk AlF 3 substrates, which might be used as nanointerconnectors of electronic devices.…”