Pattern Transfer Characterization after Double-Level Lithography for a Fabrication of the Three-Dimensional Aluminum Titanium Carbide Air Bearing Surface of the Hard Disk Slider

Abstract

The decay of 2~~R n l z 3 to levels in 2~~A t l , , .The decay of zo9Rn to levels in 209At has been investigated. Gamma rays were studied in singles and coincidences using Ge(Li) detectors. Conversion electrons were recorded with a Si(Li) detector. A decay scheme is suggested, indicating electron capture branches to positive parity states at 1 954, 2 136 and 2 415 keV. These states are interpreted in terms of core excitations in conformity with the ,07Bi isotone. Two levels at 408 and 746 keV, tentatively assigned spin 7/2-, are fed by electron capture with logfr values of 6.8 and 6.4, respectively.

Fabrication of Multi-Level Photoresist Patterns in One-Step Lithography by Using Cr/Ni Multi-Film Thickness Mask

“…This conventional patterning process is usually expensive and time-consuming. Several other fabrication methods such as multi-dose electron beam [4], Gray scale lithography (GSL) [5], Multi-level lithography [6], and Nano-imprint lithography (NIL) [7] have been developed. However, they are still not feasible for commercial use due to high process cost, time consuming, complexity in production management, and need for the special processing tool.…”