Pattern formation on Ge by low energy ion beam erosion

Teichmann, Marc; Lorbeer, Jan; Ziberi, B.; Frost, Frank; Rauschenbach, B.

doi:10.1088/1367-2630/15/10/103029

Cited by 70 publications

(85 citation statements)

References 66 publications

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“…The PSDs of ion incidence angles less than 40° were similar to each other but different from those of incidence angles of 60° and 70°. The incidence angle dependence of rms roughness of SiO 2 with Al co-deposition was very similar to those previously reported for SiO 2 [5], Si [22], and Ge [13] without metal co-deposition.…”

Section: Incidence Angle Dependence Of Smoothsupporting

confidence: 87%

“…Low-energy ion beam sputtering (IBS) is a powerful bottom-up technology for generating diverse self-organized nanostructures, such as ripples and dots on different materials including amorphous SiO 2 [1][2][3][4][5][6][7], single crystalline Si [8][9][10][11][12], Ge [10,13] and Ag [14], as well as compound semiconductors GaSb [15] and InP [16]; the IBS technology offers the potential to achieve high throughput and fabrication of large areas [10,[17][18][19]. Ion beam parameters (species, incidence angle, energy, flux, etc) and substrate parameters (material, temperature, initial surface topography, etc) interact to generate the features of such nanopatterns.…”

Section: Introductionmentioning

confidence: 99%

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Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

et al. 2017

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The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO 2 ). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar + IBS with Al co-deposition was investigated on smooth SiO 2 , pre-rippled SiO 2 , and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO 2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO 2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO 2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO 2 , respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasiblazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlO x F y compounds originating mainly from the Al source.

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Section: Incidence Angle Dependence Of Smoothsupporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

et al. 2017

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“…Also, recent systematic experimental studies, mentioned in Section 3.1, unambiguously report the dependence of the value of u c with e.g. ion-target combination, both for Si [275] and for other targets, like Ge [61,65]. Thinking in terms of e.g.…”

Section: Stress-driven Hydrodynamics Of Irradiated Silicon Targetsmentioning

confidence: 73%

“…These reflected ions hit the next upwind face, where they do cause sputtering. Hauffe's argument has been also invoked to explain ripple dynamics on Ge surfaces irradiated by 1.2 keV Xe þ at 75 [65]. Finally, an interesting observation in [70] is that the angle of the downwind ripple face with respect to the flat silicon surface remains constant for incidence angles in the 58-77 range.…”

Section: Low-energy ( < 10 Kev)mentioning

confidence: 94%

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Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Muñoz-García

Vázquez

Castro

et al. 2014

Materials Science and Engineering: R: Reports

165

201

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Medium energy ion irradiation of Ge surface - search for a better understanding of the surface nano-patterning

Kumar

Jain

Sulania

2016

Surf. Interface Anal.

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aWe report the morphological changes on Ge surfaces upon 50 keV Ar + and 100 keV Kr + beam irradiation at 60°angle of incidence. The Ge surfaces having three different amorphous-crystalline (a/c) interfaces achieved by the pre-irradiation of 50 keV Ar + beam at 0°, 30°and 60°with a constant fluence of 5 × 10 16 ions/cm 2 were further processed by the same beam at higher fluences viz. 3 × 10 17 , 5 × 10 17 , 7 × 10 17 and 9 × 10 17 ions/cm 2 to understand the mechanism of nano-scale surface patterning. The Kr + beam irradiation was carried out only on three fresh Ge surfaces with ion fluences of 3 × 10 17 , 5 × 10 17 and 9 × 10 17 ions/cm 2 to compare the influence of projectile mass on surface patterning. Irrespective of the depth of a/c interface, the nanoscale surface patterning was completely missing on Ge surface with Ar + beam irradiation. However, the surface patterning was evidenced upon Kr + beam irradiation with similar ion fluences. The wavelength and the amplitude of the ripples were found to increase with increasing ion fluence. In the paper, the mass redistribution at a/c interface, the incompressible solid flow through amorphous layer, the angular distribution of sputtering/backscattering yields and the generation of non-uniform stress across the amorphous layer are discussed, particularly in analogy with low energy experiments, to get better understanding of the mechanism of nanoscale surface patterning by the ion beams.

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Pattern formation on Ge by low energy ion beam erosion

Cited by 70 publications

References 66 publications

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Medium energy ion irradiation of Ge surface - search for a better understanding of the surface nano-patterning

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