2011
DOI: 10.1149/1.3563752
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Pattern Formation during Anodic Etching of Semiconductors

Abstract: Anodically dissolving semiconductor electrodes show a wealth of pattern formation phenomena in time and space. This paper reviews these phenomena and attempts a general explanation in terms of the so-called current burst model. The current burst model asserts that current flow through anodically dissolving semiconductor electrodes is localized in space and time. The only relevant parameters of the model are probability functions for current "on" and "off". It will be shown that interactions between current bur… Show more

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Cited by 5 publications
(2 citation statements)
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“…In regions 8 and 10, the number of discharges decreased and the discharges concentrated at some spots on the electrode surface. According to some authors [21,48], the local oxide film is a decisive parameter for the current flow since the discharges are generated through weak sites in anodic oxide film. For this reason, this process occurs stochastically in the early stages of breakdown; however, the enlargement of the oxide thickness decreases the number of these sites, reducing the discharge population density.…”
Section: Resultsmentioning
confidence: 99%
“…In regions 8 and 10, the number of discharges decreased and the discharges concentrated at some spots on the electrode surface. According to some authors [21,48], the local oxide film is a decisive parameter for the current flow since the discharges are generated through weak sites in anodic oxide film. For this reason, this process occurs stochastically in the early stages of breakdown; however, the enlargement of the oxide thickness decreases the number of these sites, reducing the discharge population density.…”
Section: Resultsmentioning
confidence: 99%
“…Note that a large number of kinks pairs will form along the dislocation line upon thermal activation, and the movement of a screw dislocation is a result of the collective behavior of the kink pairs. Reproduced with permission based on web course material published by Föll, Kiel University.…”
Section: Knowledge Base About Hementioning
confidence: 99%