Abstract:The model-based OPC is considered in 0.13um and beyond generation. However, the accuracy of model-based OPC is based on the measurement of test patterns on bare silicon wafers using the optimized exposure condition. The through pitch patterns and systematic patterns should be contained in the test patterns design. Experiments showed that that the accuracy of model would be constrained if the underlying pattern effects would not be considered. The CD performance at the defocus and process window would also suff… Show more
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