Pattern centric OPC flow: a special RET flow with fast turn-around-time

Wang, Tom; Wu, Joanne; Li, Renjie; Zhang, Gary; Wang, Benny; Su, Bo; Cheng, Guojie

doi:10.1117/12.771617

Cited by 3 publications

(1 citation statement)

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“…Although OPC has been improved to keep on using optical lithography in semiconductor industry, more advanced techniques should be developed to meet the tight requirements. 1 Many researchers have studied to develop more advanced OPC methodology, 2-3 Among the various OPC methodologies, inverse lithography technique (ILT) is another methodology to obtain perfect patterns demanded in wafer level. The ideal mask shape is numerically derived from inverse transformation of the desired wafer pattern, [4][5] thus the ideal solution is composed of the curvilinear line.…”

Section: Introductionmentioning

confidence: 99%

Requirements of the e-beam shot quality for mask patterning of the sub-1X device

Park

Lee

et al. 2016

SPIE Proceedings

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As the integration node becomes smaller in 193nm ArF immersion optical lithography, the complexity of optical proximity correction (OPC) has been increased continuously. Moreover, pattern design should be changed by more aggressive transformation technique such as inverse lithography technique (ILT). The greater fidelity to the target design on wafers is achieved by the application of these OPC techniques and results in the greater complexity level of the mask patterns. Complicated mask pattern consists of many corners and assist features, which raises the fraction of small shots in e-beam data. To get more accurate mask pattern, the dose stability of small shots becomes more important in a complicated mask pattern.In this paper, we present the evaluation results of the small shot handling capabilities of e-beam machines. According to the results, the information of small shots generated during data fracturing should be considered as a factor that defines the complexity of patterns in e-beam writing. It shows that the small shot printing in e-beam machines need to be improved in order to guarantee mask pattern quality.

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Section: Introductionmentioning

confidence: 99%