2020
DOI: 10.1364/oe.408515
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Patchwork metasurface quantum well photodetectors with broadened photoresponse

Abstract: Complex lightwave manipulation such as broadband absorption has been realized with metasurfaces based on laterally arranged metal-dielectric-metal cavities with different geometries. However, application of these metasurfaces for optoelectronic devices by incorporating functional dielectrics remains challenging. Here, we integrate a quantum well infrared photodetector (QWIP) with a metasurface made of a patchwork of square cavities with different dimensions arranged in a subwavelength unit cell. Our detector r… Show more

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Cited by 10 publications
(8 citation statements)
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“…Such PMAs have advantages such as high fabrication tolerance and a performance matching that of MIM-type absorbers. The EMIM-type absorbers can be used for other types of IR sensors (e.g., quantum-type sensors 25,26 ) and other applications (e.g., polarimetric imaging [27][28][29][30][31] or multispectral detection [32][33][34] ). We expect the results presented here to contribute to the realization of advanced functional uncooled IR sensors and to expand their range of applications.…”
Section: Discussionmentioning
confidence: 99%
“…Such PMAs have advantages such as high fabrication tolerance and a performance matching that of MIM-type absorbers. The EMIM-type absorbers can be used for other types of IR sensors (e.g., quantum-type sensors 25,26 ) and other applications (e.g., polarimetric imaging [27][28][29][30][31] or multispectral detection [32][33][34] ). We expect the results presented here to contribute to the realization of advanced functional uncooled IR sensors and to expand their range of applications.…”
Section: Discussionmentioning
confidence: 99%
“…Figure 1b,c are the front view and top view of the device, respectively. The QWIP layer grown by molecular beam epitaxy on a GaAs substrate could be transferred to an Au substrate by wafer bonding [9]. The device is composed of two MIM structures, and the widths of the two quantum well active regions are, respectively, L 1 and L 2 (L 1 = 2.5 µm, L 2 = 5 µm).…”
Section: Methodsmentioning
confidence: 99%
“…Nanomaterials 2021, 11, x FOR PEER REVIEW 3 of 10 strate could be transferred to an Au substrate by wafer bonding [9]. The device is composed of two MIM structures, and the widths of the two quantum well active regions are, respectively, L1 and L2 (L1 = 2.5 μm, L2 = 5 μm).…”
Section: Methodsmentioning
confidence: 99%
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“…Fabricating etched and unetched cavities allow for systematic evaluation of noise reduction effects. Previously, etching away the QWIP layer outside of the metal-dielectric-metal (MDM) cavities has been used to reduce noise in metasurface QWIPs with identical N w [7][8][9][10][11]. Etching reduces the electrical area of metasurface QWIPs, reducing I D while minimally affecting R and ƞ abs due to the localized absorption in the MDM cavity.…”
Section: Metasurface Qwips With Other Cavity Designsmentioning
confidence: 99%