Passively Mode-Locked Lasers With Integrated Chirped Bragg Grating Reflectors

Strain, Michael J.; Stolarz, P.; Sorel, Marc

doi:10.1109/jqe.2010.2091396

Cited by 21 publications

(6 citation statements)

References 26 publications

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“…Furthermore, the channel spacing is often a static comb source characteristic that does not need to be controlled, so that it suffices to actively control the wavelength of a single comb line to snap the entire comb to a WDM grid [6]. Various compact comb sources have been demonstrated, including single section semiconductor mode-locked lasers (SS-MLLs) [7][8][9][10], semiconductor mode-locked lasers with saturable absorber [11,12], integrated optical parametric oscillators (OPOs) relying on the Kerr effect in integrated microcavities [13][14][15][16], and gain switched comb sources [17]. Here, we will focus on SS-MLLs in which the individual comb lines are mode locked within a FabryPerot semiconductor laser cavity by means of nonlinear optical effects.…”

Section: Introductionmentioning

confidence: 99%

Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

Müller

Hauck

Shen

et al. 2015

Advanced Optical Technologies

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Abstract:We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RROADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

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Section: Introductionmentioning

confidence: 99%

Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

Müller

Hauck

Shen

et al. 2015

Advanced Optical Technologies

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“…This particular material was chosen because its ML behavior is well understood and documented, thanks to extensive characterization carried out previously [6]. Besides the insertion of a preliminary QWI step, the fabrication followed a standardized laser fabrication process, whose details can be found elsewhere [11]. The applied bandgap blueshift through QWI had to be carefully chosen, given the lack of extensive published data on the behavior of monolithic SMLLs with blue-detuned absorbers.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing

Pusino¹,

Strain²,

Sorel³

2014

Photon. Res.

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Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift applied to the saturable absorber (SA) section has been experimentally characterized. For the first time a fully post-growth technique, quantum well intermixing, was adopted to modify the material bandgap in the SA section. The measurements showed not only an expected narrowing of the pulse width but also a significant expansion of the range of bias conditions generating a stable train of optical pulses. Moreover, the pulses from lasers with bandgap shifted absorbers presented reduced chirp and increased peak power with respect to the nonshifted case.

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“…Nevertheless, with careful optical design of the onchip laser structure the full range of optical pulse features can be accessed. These include, pulse-duration, average and peak power [1], dispersion [2], emission wavelength [3] and repetition rate [4], [5]. By using the toolbox of on-chip photonic components available, all of these laser characteristics can be designed to suit the application and even exhibit an amount of active control.…”

Section: Introductionmentioning

confidence: 99%