Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS ₂ as a saturable absorber

Abstract

Passive harmonic mode locking of an erbium-doped fiber laser based on few-layer molybdenum disulfide (MoS2) saturable absorber (SA) is demonstrated. The few-layer MoS2 is prepared by the chemical vapor deposition (CVD) method and then transferred onto the end face of a fiber connector to form a fiber-compatible MoS2 SA. The 20th harmonic mode-locked pulses at 216-MHz repetition rate are stably generated with a pulse duration of 1.42 ps and side-mode suppression ratio (SMSR) of 36.1 dB. The results confirm that few-layer MoS2 can serve as an effective SA for mode-locked fiber lasers.

Mode-locked fiber laser with MoSe 2 saturable absorber based on evanescent field

“…A similar phenomenon was also observed in reported works with Bi 2 Te 3 , [24] SWNT, [46] and MoS 2 . [47] Figure 8 shows the output pulse train measured with a 1 GHz digital oscilloscope (Tektronic MDO 3102). The interval of the pulses train is 61.2 ns, corresponding to a repetition rate of 16.33 MHz and a cavity length of 12.67 m, thereby proving the single-pulse operation of the mode-locked laser.…”

Passively harmonic dissipative soliton generation in normal dispersion erbium-doped fiber laser using SMS fiber as artificial saturable absorber

“…This eventually leads to the formation of stable and narrow pulse after many round trips of absorption and transmission. Popular emerging materials SA for HML include single-walled carbon nanotubes (SWCNTs) 9 , 10 , topological insulator (TI) 11 , 12 , transition metal dichalcogenide (TMD) 13 , 14 , graphene 15 , 16 and MXene 17 , 18 . Above emerging materials offer high optical absorption and fast recovery time that favorable for mode-locking operation.…”

Strain-induced magnetism in ReS 2 monolayer with defects

“…Due to unique electronic properties and chemical stability, tremendous research efforts have been focused on layered transition-metal dichalcogenides (TMDCs) considered as promising potential candidates on electronic, optoelectronic, and photovoltaic applications. [1][2][3][4][5][6][7][8] As a popular member of TMDCs, MoS 2 monolayer is a two-dimensional (2D) material with bandgap suitable for logic device application, [9][10][11] and can be easily synthesized through chemical growth. [12,13] Unfortunately, when increased the number of layers and applied small strain, MoS 2 undergoes a crossover from direct to indirect band gap, which poses great challenge in making robust optoelectronic devices based on MoS 2 .…”