Passive and Active Glass Integrated Optics Devices

Kevorkian, A.

doi:10.1007/978-3-642-56466-6_6

Cited by 1 publication

(5 citation statements)

References 44 publications

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“…In a recently published paper, Izeddin et al 29 have measured the density of sensitizers ͑Si-nc͒ by optically pumping with intense laser pulses of a few ns, a shorter duration than the transfer time of the excitation ͑ϳ1 s͒. Hence, by quantifying the emitting Er they deduce 3 , the same value we found by the EFTEM quantification. Such a coincidence is remarkable, even considering that the error bars are large ͑35%͒.…”

Section: B Quantification Of the Density Of Si-ncsupporting

confidence: 58%

“…The window delimited between these points has a dimension of 87ϫ 88 nm. The total analyzed volume can be calculated using these data and corresponds to 3 28 in samples with similar Si excess. In a recently published paper, Izeddin et al 29 have measured the density of sensitizers ͑Si-nc͒ by optically pumping with intense laser pulses of a few ns, a shorter duration than the transfer time of the excitation ͑ϳ1 s͒.…”

Section: B Quantification Of the Density Of Si-ncmentioning

confidence: 99%

“…3,15 The model used in this work is fundamentally based on the one of five levels of Er 3+ ions interacting with a quasi-two-level scheme of Si-nc. A comprehensive description of the rate equations of such a coupled model for Si-nc and Er can be found in Ref.…”

Section: Er 3+ Luminescence Model Based On the Interaction Betwementioning

confidence: 99%

“…2 These effects, combined with the discrete nature of the electronic energy levels in Er ions, imply that high power and thus expensive and bulky laser diodes at 980 or 1480 nm must be used for the excitation. Although other glasses have been used as matrices and Yb as sensitizer, 3 the pumping constraints have not been completely relaxed and thus there is still the need to develop an appropriate material to produce Er-doped waveguide amplifiers ͑EDWAs͒ of small size, low cost, and compatible with Si technology. This accomplishment would allow their integration in LANs together with other silicon photonic components.…”

Section: Introductionmentioning

confidence: 99%

“…This paper investigates the interaction between Si nanoclusters ͑Si-nc͒ and Er in SiO 2 , reports on the optical characterization and modeling of this system, and attempts to clarify its effectiveness as a gain material for optical waveguide amplifiers at 1.54 m. Silicon-rich silicon oxide layers with an Er content of 4 -6 ϫ 10 20 at./ cm 3 were deposited by reactive magnetron sputtering. The films with Si excess of 6 -7 at.…”

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confidence: 99%

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Excitable Er fraction and quenching phenomena in Er-dopedSiO2layers containing Si nanoclusters

et al. 2007

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This paper investigates the interaction between Si nanoclusters ͑Si-nc͒ and Er in SiO 2 , reports on the optical characterization and modeling of this system, and attempts to clarify its effectiveness as a gain material for optical waveguide amplifiers at 1.54 m. Silicon-rich silicon oxide layers with an Er content of 4 -6 ϫ 10 20 at./ cm 3 were deposited by reactive magnetron sputtering. The films with Si excess of 6 -7 at. %, and postannealed at 900°C showed the best Er 3+ photoluminescence ͑PL͒ intensity and lifetime, and were used for the study. The annealing duration was varied up to 60 min to engineer the size and density of Si-nc and optimize Si-nc and Er coupling. PL investigations under resonant ͑488 nm͒ and nonresonant ͑476 nm͒ pumping show that an Er effective excitation cross section is similar to that of Si-nc ͑ϳ10 −17 -10 −16 cm 2 ͒ at low pumping flux ͑ϳ1016 -10 17 cm −2 s −1 ͒, while it drops at high flux ͑Ͼ10 18 cm −2 s −1 ͒. We found a maximum fraction of excited Er of about 2% of the total Er content. This is far from the 50% needed for optical transparency and achievement of population inversion and gain. Detrimental phenomena that cause depletion of Er inversion, such as cooperative up conversion, excited-stated absorption, and Auger deexcitations are modeled, and their impact in lowering the amount of excitable Er is found to be relatively small. Instead, Auger-type short-range energy transfer from Si-nc to Er is found, with a characteristic interaction length of 0.4 nm. Based on such results, numerical and analytical ͑Er as a quasi-two-level system͒ coupled rate equations have been developed to determine the optimum conditions for Er inversion. The modeling predicts that interaction is quenched for high photon flux and that only a small fraction of Er ͑0.2-2 %͒ is excitable through Si-nc. Hence, the low density of sensitizers ͑Si-nc͒ and the short range of the interaction are the explanation of the low fraction of Er coupled. Efficient ways to improve Er-doped Si-nc thin films for the realization of practical optical amplifiers are also discussed.

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Section: B Quantification Of the Density Of Si-ncsupporting

confidence: 58%