2015
DOI: 10.1016/j.tsf.2014.10.025
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Passivation study of multi-crystalline silicon wafer with i-a-Si:H layer deposited by HWCVD

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Cited by 3 publications
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“…The details of the process can be found in our previously published work. 50,51 The a-Si:H film, more often referred to simply as a-Si or Si in the manuscript, was obtained by allowing SiH 4 gas (Matheson, ULSI grade) to pass through the tantalum filament (Kurt J Lesker, 0.5 mm) held at 1600 °C for a duration of 3 min 30 s. A constant flow of 20 sccm of SiH 4 gas at a pressure of 20 mTorr was maintained during the growth process.…”
Section: Methodsmentioning
confidence: 99%
“…The details of the process can be found in our previously published work. 50,51 The a-Si:H film, more often referred to simply as a-Si or Si in the manuscript, was obtained by allowing SiH 4 gas (Matheson, ULSI grade) to pass through the tantalum filament (Kurt J Lesker, 0.5 mm) held at 1600 °C for a duration of 3 min 30 s. A constant flow of 20 sccm of SiH 4 gas at a pressure of 20 mTorr was maintained during the growth process.…”
Section: Methodsmentioning
confidence: 99%