Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt;O&amp;lt;sub&amp;gt;3&amp;lt;/sub&amp;gt;

Salihoglu, Omer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Raşit; Kocabaş, Coşkun; Aydınlı, Atilla

doi:10.1117/12.920406

Cited by 8 publications

(1 citation statement)

References 19 publications

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“…Surface leakage currents mostly originate from surface states due to dangling bonds, inversion layers and interfacial traps which are generated due to the abrupt termination of the crystal structure. Various passivation methods such as sulfide passivation [1], dielectric layer deposition [2,3], overgrowth with wide bandgap materials [4], polymer film coating [5] have been proposed to overcome these problems. Sulphur passivation is an effective passivation method and is easy to apply but the effect of passivation is temporary making it impractical [6].…”

Section: Introductionmentioning

confidence: 99%

Thiol passivation of MWIR type II superlattice photodetectors

2013

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Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps leading to surface leakage currents that short circuit diode action. Good passivation, therefore, is critical in the fabrication of high performance devices. Silicondioxide has been the main stay of passivation for commercial photodetectors, deposited at high temperatures and high RF powers using plasma deposition techniques. In photodetectors based on III-V compounds, sulphur passivation has been shown to replace oxygen and saturate the dangling bonds. Despite its effectiveness, it degrades over time. More effort is required to create passivation layers which eliminate surface leakage current. In this work, we propose the use of sulphur based octadecanethiol (ODT), CH 3 (CH 2 ) 17 SH, as a passivation layer for the InAs/GaSb superlattice photodetectors that acts as a self assembled monolayer (SAM). ODT SAMs consist of a chain of 18 carbon atoms with a sulphur atom at its head. ODT Thiol coating is a simple process that consist of dipping the sample into the solution for a prescribed time. Excellent electrical performance of diodes tested confirm the effectiveness of the sulphur head stabilized by the intermolecular interaction due to van der Walls forces between the long chains of ODT SAM which results in highly stable ultrathin hydrocarbon layers without long term degradation.

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Section: Introductionmentioning

confidence: 99%

Thiol passivation of MWIR type II superlattice photodetectors

2013

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Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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