Passivation of Solution-Processed a-IGZO Thin-Film Transistor by Solution Processable Zinc Porphyrin Self-Assembled Monolayer

Zalte, Maruti B.; Naik, Tejas R.; Alka, A.; Ravikanth, Mangalampalli; Rao, V. Ramgopal; Baghini, Maryam Shojaei

doi:10.1109/ted.2021.3111542

Cited by 9 publications

(8 citation statements)

References 16 publications

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“…57 These peaks correspond to metal–oxygen (M–O) bonds, oxygen vacancies (V o ), and weekly bound oxygen species, respectively. 58 The observed results show a consistent correlation with previous research regarding the change in the O 1s peak with an increasing additive ratio of the co-solvent. 59 As shown in Fig.…”

Section: Resultssupporting

confidence: 91%

A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect

Kim,

Jeong,

et al. 2023

J. Mater. Chem. C

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Section: Resultssupporting

confidence: 91%

A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect

Kim,

Jeong,

et al. 2023

J. Mater. Chem. C

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“…[ 54 ] The electrical properties of IGZO TFTs with various deposition methods and structures reported in the literature are summarized in Table 1. [ 18,51b–59 ] As far as we know, this is the first a‐IGZO TFT with SA coplanar structure using spray pyrolysis. The bottom gate and back channel etched IGZO TFTs by spray pyrolysis or spin coating have been reported.…”

Section: Resultsmentioning

confidence: 99%

“…Arrhenius plot and the extracted E act as a function of V GS are shown in Figure S6a,b, Supporting Information, respectively. The extracted E act of 23 meV saturates at 2018 [55] IGZO/SiO 2 MOCVD BCE 19.30 0.18 10 7 PBS NBIS 2018 [55] IGZO/SiO 2 PEALD TG Coplanar 28.00 0.36 N/A PBTS NBTS 2021 [56] IGZO/Al 2 O 3 Spray pyrolysis BCE 15.1 0.26 10 5 NBIS 2018 [57] IGZO/SiO 2 Spin coating BGBC 8.50 0.40 10 7 PBS NBS 2021 [58] IGZO/SiO 2 Sping coating BCE 3.57 0.69 10 6 PBS NBS 2022 [59] IGZO/SiO 2 Spray pyrolysis SA coplanar 18.17 0.26 10 8 PBTS NBTS NBIS This work a higher V GS of 15 V. This indicates that most of the charges induced by V GS could occupy the tail states below the conduction band edge and thus the Fermi level moves closer to the conduction band edge as V GS increases. [65] Therefore, the rapid decrease of activation energy reveals that the Fermi level can easily approach the conduction band edge.…”

Section: Stability Of Spray-pyrolyzed A-igzo Tftsmentioning

confidence: 99%

Spray Pyrolyzed Amorphous InGaZnO for High Performance, Self‐Aligned Coplanar Thin‐Film Transistor Backplanes

Bae

Ali

Jang

2022

Adv Materials Technologies

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This CBM mainly consists of cation s-orbitals that are large enough to overlap the adjacent cations. Therefore, the effective mass of electrons is relatively small and less affected by the disorder of non-directional s-orbitals than the directional sp3 orbital in Si, allowing the AOS to make relatively high mobility even in the amorphous phase. [3,4] The fabrication process of AOS is not as complicated as that of low-temperature poly-Si (LTPS). [5] AOS can be fabricated by both vacuum and low-cost solution processes. The conventional AOS processing methods are sputtering, atomic layer deposition (ALD), metal-organic chemical vapor deposition (MOCVD), spin coating, ink-jet printing, spray pyrolysis, and so on. [6][7][8][9][10] Among these methods, spray pyrolysis is one of the most promising technology due to its simplicity, cost-efficiency, and vacuum-free deposition capability. Compared to the other solution methods, spray pyrolysis can produce uniform films over large areas. [11] However, the main challenges of the spray pyrolysis technique are to make dense and bubbles free films at low temperature. The rapid evaporation of the solvent during spray coating often results in bubbles or coffee rings throughout the film. In previous work, we developed high-density and bubbles-free metal oxide films using precursor solution modification. [12a] The zinc (Zn) based thin-films grown at 350 °C have shown high density with bubbles-free smooth surface morphology. [12a] These materials are applied to obtain high-performance zinc oxide (ZnO) based TFTs, exhibiting mobility over 70 cm 2 V −1 s −1 and excellent stability. [13][14][15][16][17] The device structure is one of the crucial technology to fabricate TFTs backplane for an active-matrix organic light-emitting diode (AMOLED) display. The self-aligned (SA) coplanar TFTs offer a large area, fast frame rate, and high-resolution AMOLED display compared to the bottom-gated (BG) structure. Therefore, the SA coplanar TFTs are being used for the manufacturing of AMOLED television (TV). To the best of our knowledge, there is only one report on SA coplanar TFT with a metal oxide semiconductor (MOS) using spray pyrolysis. [18] Most reports on spray-pyrolyzed MOS devices have focused on the BG TFTs with the inverted staggered structure such as etch stopper (ES) or back channel etched (BCE). [19] This structure has high parasitic capacitance (C par ) due to the overlap between the gate and source/drain (S/D) electrodes. [20] On the High-performance, spray-pyrolyzed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with self-aligned (SA) coplanar structure is demonstrated. The spray-pyrolyzed a-IGZO film exhibits bubbles-free smooth surface roughness (0.81 nm) and low oxygen-related defects (22.5%). The fluorine-doped a-IGZO film shows a low resistivity of 1.18 × 10 −3 Ω-cm by NF 3 plasma treatment. This is sufficient to obtain ohmic contact with the source/ drain electrodes and doped IGZO in the offset region of the SA coplanar TFT. The spray-pyrolyzed a-IGZ...

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“…The mimicry of natural photosynthetic systems at molecular levels has constantly been investigated in the past decade in order to advance molecular photonic and electronic devices. − This has led to the evolution in the design and synthesis of porphyrin arrays consisting of covalently linked porphyrin dimers and oligomers. Porphyrins are known to show intense absorption in the visible region, are chemically stable, have tunable optoelectronic properties, and are therefore aptly called the extroverts of chemistry .…”

Section: Introductionmentioning

confidence: 99%

Synthetic Model for FRET Constructed from Covalently Linked Porphyrin Dimers through a Pyrene Bridge

et al. 2023

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We report the synthesis and characterization of two porphyrin arrays C 6 F 5 -PyZnDP and Mes-PyZnDP covalently linked by a pyrene moiety which differs from their substituents at their meso-positions. The key precursor bis-dipyrromethane linked with a pyrene bridge was prepared by the acidcatalyzed condensation of pyrene-1,6-dialdehyde with excess pyrrole. The synthesis of C 6 F 5 -PyZnDP was carried out via two different synthetic routes, with one being efficient over the other. Therefore, the superior route was employed for the synthesis of C 6 F 5 -PyZnDP and Mes-PyZnDP. Both the free base and metalated diporphyrins show bathochromically shifted absorption and intense red emission due to the extended π-conjugation through pyrene and porphyrins. The single-crystal X-ray structure reveals an orthogonal orientation of pyrene in between the two planar porphyrins and a slipped stacked packing arrangement in the crystal structure with large meso−meso distances. DFT analysis of both the ground state and the excited S1 state of the macrocycles indicates the difference in the HOMO and LUMO contribution in both the states arising from slight twisting from the mean orthogonal position in the excited state. Further, the Forster energy transfer (FRET) efficiencies from pyrene (donor) to the covalently linked Zn-porphyrins (acceptor) are estimated to be 85 and 91% for Mes-PyZnDP and C 6 F 5 -PyZnDP, respectively.

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Passivation of Solution-Processed a-IGZO Thin-Film Transistor by Solution Processable Zinc Porphyrin Self-Assembled Monolayer

Cited by 9 publications

References 16 publications

A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect

A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect

Spray Pyrolyzed Amorphous InGaZnO for High Performance, Self‐Aligned Coplanar Thin‐Film Transistor Backplanes

Synthetic Model for FRET Constructed from Covalently Linked Porphyrin Dimers through a Pyrene Bridge

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