Abstract:Oxygen vacancies (VO) often exist in wide-bandgap metal oxide semiconductors (MOSs) as deep-level defects and undermine the reliability of various optoelectronic devices based on MOSs. Conventional methods to passivate VO defects, such as high-temperature annealing or plasma treatment, can compromise device performance. In this work, it is demonstrated that passivation of VO defects in aluminum-doped ZnO (AZO) nanoparticles can be realized through low-temperature annealing (350 oC) in an NF3 atmosphere. After … Show more
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