Passivation of laser grooved buried contacts (LGBC) solar cells with silicon oxide or silicon nitride grown by a remote sputtering deposition system

Claudio, Gianfranco; Zhou, Zhaoxia; Hibberd, Christopher J.; Bass, K.

doi:10.1109/pvsc.2008.4922436

Cited by 1 publication

(1 citation statement)

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“…In Fig. 1, the rear locally diffused cell consists of the complete covering with a passivating oxide layer and small area contacts for diffusing local heavy p+ Si [6]. Nonetheless, the cell processing to open the small areas is still used laser or photolithography technique.…”

Section: Introductionmentioning

confidence: 99%

Aluminum-Induced Crystallization of p<sup>+</sup> Silicon Pinholes for the Formation of Rear Passivation Contact in Solar Cell

Fangsuwannarak

Amonsurintawong

Sopitpan

2013

KEM

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Formation of nano-crystalline p+ silicon (Si) in pinholes through a silicon dioxide layer was achieved by pinning of aluminum through the thin silicon dioxide (SiO2) layer. In addition to opening holes of SiO2 layer by aluminum (Al) pining, amorphous silicon (a-Si) was subsequent deposited on the Al layer and another heated at low temperature (500°C) to allow solid- phase epitaxial growth of p+ Si in the pinholes due to the Al induced layer exchange process. The poly-crystalline p+ Si obtains lower effective surface recombination than the Al back surface field (BSF). The technique demonstrated to result in ohmic contacts with low contact resistance. The evaluation of Al-induced crystallization of a-Si in a-Si/Al bilayer was studied by X-ray diffraction. In this paper, the influence of a-Si/Al thickness ratio on the specific conductivity value and crystalline grain size of the p+ Si thin film is discussed. The obtained results are helpful for a further design of the rear passivation contact in solar cell.

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Section: Introductionmentioning

confidence: 99%