Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

Abstract

Deep level transient spectroscopy, (DLTS) and cathodoluminescence (CL) were used to study the hydrogen passivation of misfit dislocations in In,,, Ga0,4As/GaAs heterostructures. The CL observations indicate that hydrogen plasma exposure passivates most, but not all, of the dark line defects existing iti the specimen prior to hydrogenation. The concentration of deep level defect states that cannot be passivated is below the detection limit of the DLTS instrument [approximately 4X 1012 cmw3). We find the passivation is stable after anneals at temperatures as high as 600 'C, indicating that hydrogen passivation of misfit dislocations is at least as stable as that of the isolated point defect studied previously with

Period-doubling reconstructions of semiconductor partial dislocations

“…Because these dislocations act as recombination centers for charge carriers [6][7][8] and reduce the device efficiency, the density of dislocations in the active region of the device must be minimized, generally by carefully varying the lattice constant in a thick graded layer. [9][10][11] It may also be possible to mitigate the impact of these dislocations via passivation with impurities, [12][13][14][15] or by controlling the type 16 or direction of the remaining dislocations.…”