Passivation of copper by silicide formation in dilute silane

Hymes, S.; Murarka, S. P.; Shepard, C.; Lanford, W. A.

doi:10.1063/1.350765

Cited by 68 publications

(27 citation statements)

References 4 publications

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“…At temperatures below the pyrolysis, silane is known to catalytically decompose only at the surface of the metal. 30 The CVD runs were realized at temperatures between 600 and 650°C for a duration of 15 min, giving rise to NWs of several microns in length. More details on NW synthesis can be found elsewhere.…”

Section: Methodsmentioning

confidence: 99%

Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires

Arbiol

Morral

Estradé

et al. 2008

Journal of Applied Physics

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The occurrence of heterostructures of cubic silicon/hexagonal silicon as disks defined along the nanowire ͗111͘ growth direction is reviewed in detail for Si nanowires obtained using Cu as catalyst. Detailed measurements on the structural properties of both semiconductor phases and their interface are presented. We observe that during growth, lamellar twinning on the cubic phase along the ͗111͘ direction is generated. Consecutive presence of twins along the ͗111͘ growth direction was found to be correlated with the origin of the local formation of the hexagonal Si segments along the nanowires, which define quantum wells of hexagonal Si diamond. Finally, we evaluate and comment on the consequences of the twins and wurtzite in the final electronic properties of the wires with the help of the predicted energy band diagram.

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Section: Methodsmentioning

confidence: 99%

Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires

Arbiol

Morral

Estradé

et al. 2008

Journal of Applied Physics

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“…Numerous solid state experimental techniques have been implemented to detect metal silicides and determine their properties, such as (Schottky) barrier heights and contact resistances. [28,29] Knowledge of the growth pattern of coinage metal−doped Si clusters will improve understanding of the formation mechanisms and associated properties of those silicides. For SinCu + (n = 6−11), it is found that the Cu atom prefers to cap either a face or edge of the ground state structure of the parent bare Sin + or Sin cluster.…”

Section: Introductionmentioning

confidence: 99%

The Geometric Structure of Silver‐Doped Silicon Clusters

Li¹,

Lyon²,

Woodham³

et al. 2014

ChemPhysChem

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Cationic silver-doped silicon clusters, Si_nAg⁺ (n=6–15), are studied using infrared multiple photon dissociation in combination with density functional theory computations. Candidate structures are identified using a basin-hopping global optimizations method. Based on the comparison of experimental and calculated IR spectra for the identified low-energy isomers, structures are assigned. It is found that all investigated clusters have exohedral structures, that is, the Ag atom is located at the surface. This is a surprising result because many transition-metal dopant atoms have been shown to induce the formation of endohedral silicon clusters. The silicon framework of Si_nAg⁺ (n=7–9) has a pentagonal bipyramidal building block, whereas the larger Si_nAg⁺ (n=10–12, 14, 15) clusters have trigonal prism-based structures. On comparing the structures of Si_nAg⁺ with those of Si_nCu⁺ (for n=6–11) it is found that both Cu and Ag adsorb on a surface site of bare Si_n⁺ clusters. However, the Ag dopant atom takes a lower coordinated site and is more weakly bound to the Si_n⁺ framework than the Cu dopant atom

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“…(3) A copper-silicide protective layer was formed by reacting silane with copper film [11]. Copper thin film reacts with 2% SiH 4 /N 2 at various temperatures and holding times to form metal-silicides (Cu 5 Si 3 or Cu 3 Si).…”

Section: Introductionmentioning

confidence: 99%