Passivation of Al₂O₃ / TiO₂on monocrystalline Si with relatively low reflectance

Green upconversion improvement of TiO2 codoped Er3+-Yb3+ nanoparticles based thin film by adding ALD-Al2O3 for silicon solar cell applications

“…The substrates are n-type (100) Si wafers (CZ, thickness 250-300 μm and a resistivity 10-30 Ω.cm from Sil'tronix ST) cut in 20 mm ˟ 20 mm pieces. Prior to spin coating deposition, the substrates are cleaned with conventional Radio Corporation of America procedure (RCA) [22]. The deposition process while respecting DOE approach is performed.…”

Influence of interface layer on optical properties of sub-20 nm-thick TiO2films

“…Recently, intensive studies on high dielectric constants (high-k) materials have been carried out to look for alternative gate dielectric materials applied in the silicon channel metal-oxide-semiconductor (MOS) devices in order to replace the traditional silicon dioxide (SiO 2 ) for its limit of exponentially increasing tunneling current with decreasing dielectric thickness [1][2][3][4][5][6][7]. Unfortunately, an interface layer (IL) do exist between the Si and high-k oxides.…”