Passivation effects of polyphenylene sulphide on the surface of GaAs

Abstract

Vacuum-evaporated thin films of polyphenylene sulphide have been used as an insulating overlayer on n-GaAs(110). Sulphur present in the polymer is seen to passivate the dangling bonds of GaAs. The interface of n-GaAs/polyphenylene sulphide was studied using grazing-angle x-ray diffraction at various angles for different annealing temperatures. The electronic properties of the interface are studied using electron-beam-induced-current measurements for determining the minority-carrier diffusion length and surface recombination velocity. The x-ray-diffraction analysis indicates the formation of arsenic sulphide at the interface and is expected to reduce the dangling bond density. The treated surface shows an increase in diffusion length and reduction in the surface recombination velocity. The polymer-semiconductor interface shows stability against annealing up to a temperature of 300 °C.

Nano and microscale surface and sub-surface modifications induced in optical materials by femtosecond laser machining

“…TSEE measurements have been used in the past [20,21] to detect passivating effects of various treatments by observing the suppression of that defect peak attributed to a 'pinned Fermi level' [22]. In each case, there was a protective overlayer that provided the passivating effect.…”

Surface Passivation of (100)-Oriented GaAs via Plasma Deposition of an Ultrathin S-Containing Polymer Film and Its Effect on Photoluminescence

“…The deposited polymer can also be doped to form a junction with the semiconductor. 20 In general, plasma polymerization is a solvent-free process which allows the deposition of polymer films of good quality and uniformity onto various substrates and has been a particularly fruitful area of research. 19,[21][22][23][24][25][26][27] In this work, thin S-containing polymer films are deposited on the HCl-etched GaAs(100) surfaces by RF plasma polymerization of bis(methylthio)methane (BMTM).…”

“…In an alternative approach, plasma-polymerized thin films of polythiophene and poly(phenylene sulfide) were used as passivating insulators. − The modified GaAs surface showed an increase in carrier diffusion length and a reduction in surface recombination velocity. The deposited polymer can also be doped to form a junction with the semiconductor .…”

Investigation of Electronic Surface States and its Correlation to Surface Modifications in Femtosecond UV-Laser Treated n(100) GaAs

“…Unlike Si, GaAs does not have a stable and protective natural oxide, which can function as a barrier against further oxidation, and as a surface passivation layer. Consequently, several attempts towards passivating the GaAs surface have been attempted [6][7][8][9][10]. However, the use of lasers for generating such a protective layer is an attractive option, due to its non-contact nature, thereby avoiding chemical contamination.…”