Abstract:Passivation capping that enhances the photoluminescence (PL) of molecular beam epitaxy (MBE)-grown InAs surface quantum dots (SQDs) is realized by ex situ low-temperature atomic layer deposition (ALD)-grown Al2O3. As the Al2O3 cap thickness increased from 2 to 30 nm, the PL intensity was enhanced by 2.7-fold and the blue shift was suppressed. This is in strong contrast to wet chemistry passivation and in situ GaAs capping by MBE, both of which resulted in significant PL blueshift, due to etching in the former,… Show more
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