Passivation and Doping due to Hydrogen in III-Nitrides

Limpijumnong, Sukit; Walle, Chris G. Van de

doi:10.1002/1521-3951(200111)228:1<303::aid-pssb303>3.0.co;2-a

Cited by 73 publications

(45 citation statements)

References 11 publications

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“…GaAs and wide-band-gap materials such as ZnSe and GaN [6], produced similar results, seemingly confirming this behavior as a general feature of hydrogen' s interactions with semiconductors. It therefore came as a surprise when calculations showed that H behaves exclusively as a donor in ZnO [7].…”

Section: Introductionsupporting

confidence: 79%

Hydrogen in semiconductors and insulators

Walle

2007

Journal of Alloys and Compounds

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We describe a first-principles methodology for studying the interactions between hydrogen and materials. In non-metals, isolated hydrogen atoms occur as electrically charged impurities, and this charge has profound effects on the incorporation of hydrogen into the material. We have developed a model that enables us to predict the electrical properties of hydrogen in any material, based on its band alignment on an absolute energy scale. We define the key quantities that describe the interaction between hydrogen and the host materials, and discuss how fundamental knowledge of this type can be applied to hydrogen storage materials. AbstractWe describe a first-principles methodology for studying the interactions between hydrogen and materials. In non-metals, isolated hydrogen atoms occur as electrically charged impurities, and this charge has profound effects on the incorporation of hydrogen into the material. We have developed a model that enables us to predict the electrical properties of hydrogen in any material, based on its band alignment on an absolute energy scale. We define the key quantities that describe the interaction between hydrogen and the host materials, and discuss how fundamental knowledge of this type can be applied to hydrogen storage materials.

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Section: Introductionsupporting

confidence: 79%

Hydrogen in semiconductors and insulators

Walle

2007

Journal of Alloys and Compounds

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“…Hydrogen has also been proposed as a source of conductivity in another novel semiconductor material InN, which is actually similar in many respects to TCOs (see Section 5). In that material, there is currently intense debate over whether hydrogen can be seen as the dominant source of conductivity, whether it is present in sufficient quantities, and whether it remains dominant over native defects over the whole Fermi level range spanned in existing material [113][114][115][116][117][118][119][120][121][122]. Such considerations may be expected to apply to TCO materials as well, and further investigations in this area are still required.…”

Section: Origin Of the Bulk N-type Conductivity?mentioning

confidence: 99%

Conductivity in transparent oxide semiconductors

King

Veal

2011

J. Phys.: Condens. Matter

224

180

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Abstract. Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band-gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the presence of interstitial and substitutional species are still somewhat open questions, it is one of the leading contenders for unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case of conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total conductivity in TCOs. We discuss models that attempt to explain both the bulk and surface conductivity based on features of the bulk band structure common across the TCOs, and compare these materials to other semiconductors. Finally, we briefly consider transparency in these materials, and its interplay with conductivity. Understanding this interplay, as well as the microscopic contenders for the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.

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“…1 of shallow-donor behavior in InN and contrasting deep-level amphoteric behavior in GaN and AlN is likewise explicit in the results of density functional calculations. 13 In this letter we report experimental confirmation for the existence of a shallow donor state associated with muonium in InN, supporting the prediction of the band-offset model and theory. Figure 2 shows the frequency spectrum for muon spin precession in InN obtained at the ISIS pulsed muon source using high-purity powder from Alfa Aesar.…”

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confidence: 99%

Shallow donor state of hydrogen in indium nitride

Davis

Cox

Lichti

et al. 2003

Applied Physics Letters

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The nature of the electron states associated with hydrogen in InN has been inferred by studying the behavior of positive muons, which mimic protons when implanted into semiconductors. The muons capture electrons below 60 K, forming paramagnetic centers with a binding energy of about 12 meV. Together with an exceedingly small muon-electron hyperfine constant indicative of a highly delocalized electron wave function, the results confirm the recently predicted shallow-donor properties of hydrogen in InN. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1539547͔The role of hydrogen has been crucial to the development of nitride semiconductors for device applications and remains a key issue in material deposition and doping. 1 Whether present inadvertently or added deliberately, the effect of hydrogen on electronic properties is nearly always significant. Most widely known is its propensity to pair with and passivate other impurities and defects, making isolated defect centers formed by interstitial hydrogen exceedingly difficult to study spectroscopically. Muon implantation is a convenient way of simulating the presence of hydrogen and has proven to be a valuable means of identifying the crystallographic sites and electronic structures of hydrogen defect centers in semiconductors. We refer here specifically to positive muons which, when implanted into nonmetals at low temperatures, can pick up and retain electrons to form muonium, Muϭ͓ ϩ e Ϫ ͔, effectively a light isotope of hydrogen. Despite the large isotopic mass ratio, m Mu /m H ϭ1/9, muonium mimics hydrogen rather faithfully in its chemical and electrical interactions with the lattice. 2,3 The recent discovery 4 -6 that muons implanted into several semiconductors of the II-VI family form shallow donor states was surprising in that investigations conducted over three decades had invariably found muonium to create states lying deep in the semiconducting gap. These deep states are known for Si, Ge, many III-Vs and indeed some II-VI compounds, e.g., ZnS and ZnSe. Experiments on muonium in ZnO 5 were made in direct response to theoretical work 7 which predicted that hydrogen should form shallow centers in this material. This result has recently been explicitly confirmed for hydrogen by ENDOR ͑electron-nuclear double resonance spectroscopy͒. 8

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Passivation and Doping due to Hydrogen in III-Nitrides

Cited by 73 publications

References 11 publications

Hydrogen in semiconductors and insulators

Hydrogen in semiconductors and insulators

Conductivity in transparent oxide semiconductors

Shallow donor state of hydrogen in indium nitride

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