Abstract:It is well known that in the process of thermal oxidation of silicon, there are P
b-type defects at amorphous silicon dioxide/silicon (a-SiO2/Si) interface due to strain. These defects have a very important impact on the performance and reliability of semiconductor devices. In the process of passivation, hydrogen is usually used to inactivate P
b-type defects by the reaction P
b + H2 → P
bH + H. At the same time, P
bH cen… Show more
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