“…The passive films of many metals have semiconductor properties, which can be investigated by capacitance measurements. The charge distribution at the semiconductor/solution is usually determined based on the Mott–Schottky relationship by measuring the electrode capacitance C as a function of the electrode potential E : where the negative sign is for p ‐type conductivity, the positive sign is for n ‐type conductivity, e is the electron charge, N is the charge carrier density, the electron donor concentration for n ‐type semiconductor or the acceptor concentration for p ‐type semiconductors, ϵ 0 is the vacuum permittivity, ϵ is the relative dielectric constant of the semiconductor, k is Boltzmann's constant, T is the absolute temperature, E is the applied electrode potential, and E FB is the flatband potential. The donor density can be calculated from the slope, and the flatband potential can be determined by extrapolation to C = 0.…”