1989
DOI: 10.1007/bf01168977
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Particulate characteristics and deposition features of fine AIN powder synthesized by vapour-phase reaction

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Cited by 34 publications
(6 citation statements)
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“…Aluminum nitride (AlN) ceramics, because of their excellent physical and chemical properties as high thermal-conductivity, low thermal-inflate coefficient, chemical inertness, and large energy gap, have attracted considerable attention to physics, chemistry, and material science . These materials can be produced, for example, by chemical vapor deposition from aluminum salts reacting with ammonia , or from organometallic precursors . Under vacuum condition and using magnetron reactive sputtering technique, the sputtered Al atoms can react with N 2 to form a new-type AlN nanofilm, and some Al n N m precursor intermediates have been experimentally already observed .…”
Section: Introductionmentioning
confidence: 99%
“…Aluminum nitride (AlN) ceramics, because of their excellent physical and chemical properties as high thermal-conductivity, low thermal-inflate coefficient, chemical inertness, and large energy gap, have attracted considerable attention to physics, chemistry, and material science . These materials can be produced, for example, by chemical vapor deposition from aluminum salts reacting with ammonia , or from organometallic precursors . Under vacuum condition and using magnetron reactive sputtering technique, the sputtered Al atoms can react with N 2 to form a new-type AlN nanofilm, and some Al n N m precursor intermediates have been experimentally already observed .…”
Section: Introductionmentioning
confidence: 99%
“…Several authors have examined vapor-phase reactions to synthesize AlN. Kimura and co-workers 5,6 reacted aluminum chloride (AlCl 3 ) with ammonia (NH 3 ) in nitrogen to produce submicrometer-sized powders. Similar methods recently were used by Greil et al 7 and Ohhashi et al 8 Adjoattor and Griffin 9 reported an aerosol synthesis route for the production of AlN powders from triethylaluminum and NH 3 .…”
Section: Introductionmentioning
confidence: 99%
“…High thermal conductivity, large energy gap, good thermal stability, and chemical inertness of aluminum nitride make it an advanced ceramic material and a suitable dielectric for semiconductor devices. Organoaluminium compounds have been used as precursors for aluminum nitride; however, the product formed has a high degree of carbon contamination due to pyrolysis of the organic substituents and is not suitable for commercial use. The CVD of aluminum chloride and ammonia is well studied and yields high purity AlN. , Despite the fact that this process has been the subject of numerous experimental studies, the chemical nature of the intermediates in AlN growth is still unknown. It has been shown that, together with formation of AlN films, some particles are formed in the gas phase .…”
Section: Introductionmentioning
confidence: 99%