Particle Monte Carlo simulation of Wigner function tunneling

Shifren, L.; Ferry, D. K.

doi:10.1016/s0375-9601(01)00344-9

Cited by 52 publications

(36 citation statements)

References 10 publications

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“…In this work, we consider a GaAs-based device, so the relevant scattering mechanisms are with polar optical phonons and ionized donors 28 . Well-established methods of solving the openboundary WBTE include the finite-difference approaches 13,14,29 and Monte Carlo methods 20,[30][31][32][33] . We solve Eq.…”

Section: System and Model Descriptionmentioning

confidence: 99%

“…We solve Eq. (1) using a particle-based ensemble Monte Carlo approach, where particles are assigned a property called affinity 20,21 . Quantum effects are accounted for via a time evolution of particle affinities, which are induced by the quantum evolution term in Eq.…”

Section: System and Model Descriptionmentioning

confidence: 99%

“…While the uniformly-doped DBTSs have a low peak-to-valley ratio (a commonly employed figure-of-merit of RTD performance), a wide peak plateau, and would generally perform poorly in traditional RTD applications, they are superior as intrinsic THz-frequency oscillators. We simulate time-dependent room-temperature quantum transport in these systems by solving the Wigner-Boltzmann transport equation (WBTE) by the stochastic ensemble Monte Carlo technique with particle affinities 20,21 , coupled self-consistently with Poisson's equation. Scattering is treated microscopically within the WBTE, with rates obtained from time-dependent perturbation theory (Fermi's golden rule) 22 .…”

Section: Introductionmentioning

confidence: 99%

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Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure

Jonasson

Knežević

2014

Phys. Rev. B

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We investigate time-dependent, room-temperature quantum electronic transport in GaAs/AlGaAs double-barrier tunneling structures (DBTSs). The open-boundary Wigner-Boltzmann transport equation is solved by the stochastic ensemble Monte Carlo technique, coupled with Poisson's equation and including electron scattering with phonons and ionized dopants. We observe well-resolved and persistent THz-frequency current density oscillations in uniformly-doped, dc-biased DBTSs at room temperature. We show that the origin of these intrinsic current oscillations is not consistent with previously proposed models, which predicted an oscillation frequency given by the average energy difference between the quasi-bound states localized in the emitter and main quantum wells. Instead, the current oscillations are driven by the long-range Coulomb interactions, with the oscillation frequency determined by the ratio of the charges stored in the emitter and main quantum wells. We discuss the tunability of the frequency by varying the doping density and profile.

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Section: System and Model Descriptionmentioning

confidence: 99%

Section: System and Model Descriptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure

Jonasson

Knežević

2014

Phys. Rev. B

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“…Both forms are difficult to solve and, as a result, a plethora of numerical methods for evolving the Wigner function propagation have been developed. These have involved (i) the integral form of Moyal's equation [20][21][22][23][24][25], (ii) reduction of the Moyal equation to a Boltzmann-like equation [26,27], (iii) propagation of Gaussian and coherent states [28][29][30][31], (iv) Monte Carlo schemes in which the Wigner function is contracted by averaging over stochastic trajectories of pure-states [32][33][34][35], and (v) evolving the density matrix in the coordinate representation [36,37].…”

Section: Introductionmentioning

confidence: 99%

Efficient method to generate time evolution of the Wigner function for open quantum systems

et al. 2015

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The Wigner function is a useful tool for exploring the transition between quantum and classical dynamics, as well as the behavior of quantum chaotic systems. Evolving the Wigner function for open systems has proved challenging however; a variety of methods have been devised but suffer from being cumbersome and resource intensive. Here we present an efficient fast-Fourier method for evolving the Wigner function, that has a complexity of O(N log N ) where N is the size of the array storing the Wigner function. The efficiency, stability, and simplicity of this method allows us to simulate open system dynamics previously thought to be prohibitively expensive. As a demonstration we simulate the dynamics of both one-particle and two-particle systems under various environmental interactions. For a single particle we also compare the resulting evolution with that of the classical Fokker-Planck and Koopman-von Neumann equations, and show that the environmental interactions induce the quantum-to-classical transition as expected. In the case of two interacting particles we show that an environment interacting with one of the particles leads to the loss of coherence of the other.

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“…For strongly ionized gasses and degenerate semiconductors, where part icle -particle co llisions are not negligible, the Bolt zmann transport equation may be replaced by the Fokker-Planck equation [5][6]. For ult ra small devices, whose active layers d imensions (at least one of them) are in the order of De Broglie wavelength, the BTE should be replaced by one of the quantum transport formulat ions [7][8][9][10][11], like the Wigner-Bolt zmann transport equation (WBTE) [9][10][11]. Ho wever, there exist several approaches to include the degeneracy effects and quantum correct ions to the semiclassical transport models (e.g., [12][13]).…”

Section: Introductionmentioning

confidence: 99%

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

El-Saba¹

2013

MSSE

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In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models fo r almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related v ia the carrier energy relaxation time. An improved analytical model of the carrier heat flu x, on the basis of a fourth mo ment of the Bolt zmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simu lated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simu lation. We show from the HD simu lation, the effect of the energy relaxat ion time value on the hot carrier transport in general and the breakdown voltage in particu lar, of both MOSFETs and bipolar devices.

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Particle Monte Carlo simulation of Wigner function tunneling

Cited by 52 publications

References 10 publications

Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure

Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure

Efficient method to generate time evolution of the Wigner function for open quantum systems

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

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