Particle-in-Cell/Monte Carlo Collision simulation of planar DC magnetron sputtering

Hua-Yu, Zhao; Zong-Xin, Mu

doi:10.1088/1674-1056/17/4/055

Cited by 9 publications

(3 citation statements)

References 21 publications

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“…Particle motion (e – or Ar + ) follows the equation . Additionally, the simulation of the motion of charged particles in a magnetron sputtering electromagnetic field based on Monte Carlo simulation proves that the maximum ion density is obtained when the vertical component is zero [13-16], and the experimental phenomenon in these studies can also support this conclusion. Figure 11 shows the mechanism of the vertical magnetic field.…”

Section: Resultsmentioning

confidence: 99%

Prediction of midfrequency sputtering cathode erosion position with vertical magnetic field

Yin

et al. 2020

Surface Engineering

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In this paper, the etching position of a target was predicted using magnetic field simulation. The magnetic field distribution was simulated with the finite element analysis method, the distribution of the magnetic field on the target surface was measured by a Gaussmeter, and the target erosion profile was characterized and compared with that of the simulation results. In this experiment, cylindrical cathode magnets were specially designed to control the etching behaviour at the corresponding bend location. Because the vertical component of the magnetic field at the bend was strongly influenced by the cylindrical magnets, the vertical magnetic field appeared to determine the erosion position, and this position was predicted successfully by the simulation. Furthermore, the deepest etched position was located where the vertical magnetic field component decreased to zero. The results of this paper can be used as a reference in cathode structure design and target utilization optimization.

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Section: Resultsmentioning

confidence: 99%

Prediction of midfrequency sputtering cathode erosion position with vertical magnetic field

Yin

et al. 2020

Surface Engineering

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“…However, it suffers from drawbacks such as large computation load and difficulty of multi-species and many reactions. Nonetheless, the PIC method is widely used in the simulation of MS [12][13][14][15][16][17]. Because the MS does not require the multi-species and many reactions due to the background gas is simple in most cases, and large computation load can be overcome by parallel computing such as general purpose graphics processing unit (GPGPU) [18].…”

Section: Introductionmentioning

confidence: 99%

Numerical Analysis of the Incident ion Energy and Angle Distribution in the DC Magnetron Sputtering for the Variation of Gas Pressure

Hur

Kim

et al. 2018

Appl. Sci. Converg. Technol.

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The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transport is hindered by the magnetic field at low pressure because of few collisions per electron gyromotion while the ions are not magnetized. Therefore, the space charge effect is the most dominant factor for the determination of IEADs in low-pressure magnetron sputtering discharges.

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“…Currently, magnetrons are the most important tools for industrial sputter deposition of thin metallic or nonmetallic coatings [1][2][3] . Due to the certain configuration of planar magnetron, the magnetic field above the target surface is quite complex and the current density is non-uniform [4] . Reactive sputtering is one of the most widely used techniques for preparing compound thin films by sputtering metal targets in an active gas atmosphere.…”

Section: Introductionmentioning

confidence: 99%

A study of the non-uniform current density influence in reactive sputtering deposition

Wang

Chao

et al. 2014

SPIE Proceedings

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In this work, a modeling for reactive sputtering has been presented where the non-uniform current density is taken into account. The model in this paper can be used to understand the process of reactive magnetron sputtering. The results are compared with those that assume uniform discharge current density distributed on the target. It can be concluded that the process with the non-uniform discharge density shows a higher flow of gas reactive when occurring the hysteresis behavior. In addition, a study of the radial variation of the target composition in metallic and compound mode is also performed.

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Particle-in-Cell/Monte Carlo Collision simulation of planar DC magnetron sputtering

Cited by 9 publications

References 21 publications

Prediction of midfrequency sputtering cathode erosion position with vertical magnetic field

Prediction of midfrequency sputtering cathode erosion position with vertical magnetic field

Numerical Analysis of the Incident ion Energy and Angle Distribution in the DC Magnetron Sputtering for the Variation of Gas Pressure

A study of the non-uniform current density influence in reactive sputtering deposition

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