Particle identification using the technique and pulse shape discrimination with the silicon detectors of the FAZIA project

Carboni, S.; Barlini, S.; Bardelli, L.; Neindre, N. Le; Bini, M.; Borderie, B.; Bougault, R.; Casini, G.; Edelbruck, P.; Olmi, A.; Pasquali, G.; Poggi, G.; Rivet, M. F.; Stefanini, A. A.; Baiocco, G.; Berjillos, R.; Bonnet, É.; Bruno, M.; Chbihi, A.; Cruceru, I.; Degerlier, M.; Dueñas, J. A.; Galichet, E.; Gramegna, F.; Kordyasz, A.; Kozik, T.; Kravchuk, V. L.; Lopez, O.; Marchi, T.; Martel, I.; Morelli, L.; Pârlog, M.; Petrascu, H.; Rosato, E.; Seredov, V.; Vient, E.; Vigilante, M.; Alba, R.; Santonocito, D.; Maiolino, C.

doi:10.1016/j.nima.2011.10.061

Cited by 94 publications

(67 citation statements)

References 36 publications

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“…3 has been mounted in a ΔE(Si1)−E(Si2) telescope configuration as the first ΔE(Si1) stage, followed by a 510 μm E(Si2) thick silicon detector. The E(Si2) is a typical silicon pad of the FAZIA Collaboration [10]. A CsI(Tl) scintillator detector read by a photodiode was mounted as a third layer in the telescope and it has been used in the present analysis as a veto to remove the particles punching through the two silicon stages.…”

Section: Under Beam Testmentioning

confidence: 99%

“…A logarithmic scale is used for colors (count levels). Both silicons are rear-mounted according to the FAZIA choice as described in [10]. For a given Z, the three black curves indicate the theoretical energy loss calculation for the most populated isotope A and the two adjacent neighbours A ± 1.…”

Section: Under Beam Testmentioning

confidence: 99%

“…Moreover, we developed new electronics, both the analogue stages based on high-quality charge and currentsensitive preamplifiers [5] and the subsequent processing circuits capable of fast real-time analysis and transfer of the sampled data streams [6][7][8]. It has been shown that particle identification thresholds are significantly reduced using the PSA with respect to standard ΔE − E technique for 300 μm front Si detectors, provided that highquality detectors (in reverse mounting configuration) and electronics are employed [9][10][11]. Expressed as a function of the range in silicon, particle (charge) identification thresholds resulted to be around 30 μm for Z = 5, growing up to 150 μm for Z = 40 [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…It has been shown that particle identification thresholds are significantly reduced using the PSA with respect to standard ΔE − E technique for 300 μm front Si detectors, provided that highquality detectors (in reverse mounting configuration) and electronics are employed [9][10][11]. Expressed as a function of the range in silicon, particle (charge) identification thresholds resulted to be around 30 μm for Z = 5, growing up to 150 μm for Z = 40 [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Low-temperature technique of thin silicon ion implanted epitaxial detectors

et al. 2015

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Abstract.A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a lowtemperature baking process instead of high-temperature annealing. This thermal treatment is performed after B + ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241 Am ( E α = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm 2 ) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84 Kr(E = 35 A MeV)+ 112 Sn. The ΔE −E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.

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Section: Under Beam Testmentioning

confidence: 99%

Section: Under Beam Testmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low-temperature technique of thin silicon ion implanted epitaxial detectors

et al. 2015

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“…According to the usual FAZIA recipe for optimizing the PSA performance, both silicon detectors were mounted with the ohmic (low field) side facing the target [4]. The Si detectors were of the neutron transmutation doped type for a better doping uniformity and cut at a random direction to avoid channeling effects [5]. They where connected to PACI preamplifiers placed under vacuum very close to the detectors.…”

Section: Introductionmentioning

confidence: 99%

Extracting information from partially depleted Si detectors with digital sampling electronics

Pastore

Pasquali

Neindre

et al. 2015

EPJ Web of Conferences

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Anti-proton contamination design of the imaging energetic electron spectrometer based on Geant4 simulation

Luo

Zou

Zong

et al. 2015

Sci. China Technol. Sci.

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The measurement of energetic particles plays an important role in the space environment monitoring and space weather forecasting. The accuracy of the energetic electron measurement is seriously influenced by the proton contamination. An anti-proton contamination design for the sensor of imaging energetic electron spectrometer is introduced in this paper. According to the electron and proton spectrum on the typical satellite orbits calculated by the radiation belt models, the efficiency of the anti-proton contamination design is estimated by the Geant4 simulation and the design is optimized based on the simulation results. energetic particle measurement, imaging energetic electron spectrometer, anti-proton design, Geant4 simulation Citation: Luo L, Zou H, Zong Q G, et al. Anti-proton contamination design of the imaging energetic electron spectrometer based on Geant4 simulation. Sci

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Particle identification using the technique and pulse shape discrimination with the silicon detectors of the FAZIA project

Cited by 94 publications

References 36 publications

Low-temperature technique of thin silicon ion implanted epitaxial detectors

Low-temperature technique of thin silicon ion implanted epitaxial detectors

Extracting information from partially depleted Si detectors with digital sampling electronics

Anti-proton contamination design of the imaging energetic electron spectrometer based on Geant4 simulation

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