Particle Adhesion and Removal in Chemical Mechanical Polishing and Post‐CMP Cleaning

Zhang, Fan; Busnaina, Ahmed; Ahmadi, Goodarz

doi:10.1149/1.1391989

Cited by 111 publications

(58 citation statements)

References 13 publications

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“…Mechanic-based models have been widely utilized to calculate the load transferred by the particles and pad onto the wafer as a function of typical CMP parameters. [6][7][8][9][10][11][12] The influence of applied pressure, pad properties, particle size and concentration, wafer hardness, and their interactions on the MRR is also expressed.13 A wafer-level MRR model was proposed by combining a hierarchical model of the particle-wafer-pad interactions and an adhesive wear model. 14 For z E-mail: xuqinzhi@ime.ac.cn in-depth understanding the slurry flow at the wafer-pad interface, 15,16 fluid hydrodynamics with mass transport model was also developed to depict the importance of the slurry flow to the CMP process.…”

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confidence: 99%

A Material Removal Rate Model for Aluminum Gate Chemical Mechanical Planarization

Chen

2015

ECS J. Solid State Sci. Technol.

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In this work, a new aluminum gate chemical mechanical planarization (CMP) model for material removal rate (MRR) is proposed in high-k metal gate (HKMG) process. Using the basic principles of steady-state oxidation reaction and mechanical abrasion mechanism, the combinational interaction of chemical and mechanical coupled effects on MRR was systematically described by process parameters, pad properties and concentration of oxidizer, and then balanced to construct an overall polishing rate. Because of the great significance of the slurry pH on MRR in CMP process, the effects of surface forces, including the influences of van der Waals (vdW) and double-layer (DL) forces simultaneously acted between the wafer and the particles were investigated. Meanwhile, the influence of particle sizes, abrasive loadings and zeta potentials of the wafer and particles on MRR was also analyzed. It is found that the attractive vdW forces strengthen the MRR, while the DL forces, calculated to be repulsive, lower the MRR. The magnitude of surface forces increases with a smaller particle size compared with the pad-particle force. When zeta potentials of the wafer and particles are considered as a function of slurry pH, the experimental trends for the MRR with slurry pH, applied pressure and abrasive loading were predicted well by the present model. Therefore, the governing equation of aluminum removal reveals some insights into the HKMG CMP process and can be utilized for optimizing and controlling the polishing rate of aluminum gate structures and performing sensitivity analyses of operating parameters. With the steady shrinkage of the feature size and device geometry of modern integrated circuits (ICs), chemical mechanical planarization (CMP) has become the most important process choice for the surface planarization in the fabrication of advanced multilever ICs in microelectronic industry.1 A variety of materials and structures, including copper damascene metallization, oxides in shallow trench isolation (STI) and inter-level dielectrics (ILD), replacement metal gate for high-k metal gate (HKMG) structures and fin field effect transistor (FinFET) devices are polished with different slurries. [2][3][4] In CMP process, a rotating wafer with different types of design structures is pushed against a rotating polishing pad which is immersed in slurries containing chemicals and abrasive particles. Pattern structures on the wafer surface are first chemically passivated by slurry chemicals and then removed by effects of contact interactions of abrasive particles which are trapped between the pad and the wafer. The contact mechanism of the particles in the slurry provides the opportunity to remove the material from the wafer surface at an acceptable production rate. 5The material removal rate (MRR) which has been studied extensively from both a modeling and experimental standpoint depends sensitively on pattern geometry, process parameters, chemical reactions, pad properties and mechanical abrasion. If the CMP process is not properly controlled...

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A Material Removal Rate Model for Aluminum Gate Chemical Mechanical Planarization

Chen

2015

ECS J. Solid State Sci. Technol.

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“…The removal of microcapsules adhered to a surface in a flow chamber device is a dynamic process. The displacement of microparticles from surface was conventionally suggested to be via rotation (Sanjit et al, 1994, Zhang et al, 1999a, Zhang, 1999, Zoeteweij et al, 2009). …”

Section: Microcapsule Distribution After Removalmentioning

confidence: 99%

“…Microparticles exposed to shear flow are expected to be displaced by lift, sliding, rolling or some combination thereof (Saffman, 1965, Zhang et al, 1999a, Zoeteweij et al, 2009). …”

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Adhesion of perfume-filled microcapsules to model fabric surfaces

Bowen

Andrews

et al. 2014

Journal of Microencapsulation

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“…This might be due to the contribution of velocity to the slurry flow instead of a sliding of abrasives. Zhang et al [23] proposed an equation MRR = K(PV) 1/2 which included the effects of polishing pressure and platen speed on particle penetration depth in the CMP process. This equation was derived based on the surface plastic deformation, the pad-wafer partial contact, and particle adhesion theory.…”

Section: Modeling Of Chemical Mechanical Planarizationmentioning

confidence: 99%

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

2013

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Chemical mechanical planarization (CMP) has become one of the most critical processes in semiconductor device fabrication to achieve global planarization. To achieve an efficient global planarization for device node dimensions of less than 32 nm, a comprehensive understanding of the physical, chemical, and tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is essential. During the CMP process, some issues such as film delamination, scratching, dishing, erosion, and corrosion can generate defects which can adversely affect the yield and reliability. In this article, an overview of material removal mechanism of CMP process, investigation of the scratch formation behavior based on polishing process conditions and consumables, scratch formation mechanism and the scratch inspection tools were extensively reviewed. The advantages of adopting the filtration unit and the jet spraying of water to reduce the scratch formation have been reviewed. The current research trends in the scratch formation, based on modeling perspective were also discussed.

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Particle Adhesion and Removal in Chemical Mechanical Polishing and Post‐CMP Cleaning

Cited by 111 publications

References 13 publications

A Material Removal Rate Model for Aluminum Gate Chemical Mechanical Planarization

A Material Removal Rate Model for Aluminum Gate Chemical Mechanical Planarization

Adhesion of perfume-filled microcapsules to model fabric surfaces

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

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