Partial pressures of Hg(g) and Te2(g) in Hg-Te system from optical densities

Brebrick, R. F.; Strauss, A. J.

doi:10.1016/0022-3697(65)90186-1

Cited by 131 publications

(66 citation statements)

References 13 publications

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“…As can be seen from this figure, the liquidus line shows good agreement with experimental data. Only for tellurium concentration higher [6] data. Ionic liquid model adapted to liquid phase.…”

Section: Resultsmentioning

confidence: 95%

“…For tellurium concentration smaller than 0.5 mole fraction all experimental information agree one other and calculation reproduces experiments well. Calculated partial pressure of Hg along liquidus line superimposed with experimental information obtained by Brebrick and Strauss [6] is shown in Fig. 2.…”

Section: Resultsmentioning

confidence: 99%

“…Liquidus line has been described by several papers. Brebrick and Strauss [6], Strauss [10], Vanyukov et al [11], Asadov [12], Harman [13], Delwes and Lewis [14], Delves [15] and Dziuba [16] used cooling curves to obtain liquidus temperature. Generally speaking, for tellurium concentration smaller than 0.5 mole fraction all data agree one other; however, for mole fraction of Te higher than 0.5 data obtained by Dziuba [16] and Vanyukov et al [11] shows higher temperature than obtained by others.…”

Section: Literature Informationmentioning

confidence: 99%

“…The thermodynamic properties of the liquid can be derived from ternary equilibria between gas, liquid and solid phases based on vapor pressure measurement. The pressure of the vapor was examined by Brebrick and Strauss [6], Sha et al [7] and Su et al [8] who used optical absorption method. The information is in agreement one other.…”

Section: Literature Informationmentioning

confidence: 99%

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Thermodynamic description of the Hg–Te binary system

Gierlotka

2010

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

Section: Literature Informationmentioning

confidence: 99%

Section: Literature Informationmentioning

confidence: 99%

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Thermodynamic description of the Hg–Te binary system

Gierlotka

2010

Journal of Alloys and Compounds

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“…It is simple to express PTo2 in the following simple form PTe2 = P°,2( 1 --PHg~ 2 (30) ~,pO l According to [77,81,82] 1ogpT°e~ (atm) = --5960.2/T + 4.7191 logp°g (atm) = --3099/T + 4.920 (31) The value of Y was calculated by taking into account that the pressure at the border of the region where HgTe is solid and the tellurium-rich Hgl _yTey is liquid can be calculated using the equation 1 -K2(0) -~ngexp (42.27 41260)(32) P~r~ Pig and Equation 30 should be the same. To calculate the mercury partial pressure above the border of the HgTe solid-solution HgTe, the approximate expression [85,86] 14765.55…”

Section: --Y --Ymentioning

confidence: 99%

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Djurić

1995

J Mater Sci: Mater Electron

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Isothermal vapour-phase epitaxy (ISOVPE) was the earliest process to be developed for the fabrication of epitaxial mercury-cadmium telluride layers. Although the process was somewhat neglected in the previous period, mostly because of the appearance of metalorganic chemical vapour phase epitaxy and molecular-beam epitaxy, the results of the most recent investigations show that the application of this method can be expected in the second generation of photovoltaic (PV) or metal-insulator-semiconductor (MIS) detectors in the focal plane. This review paper presents the development of ISOVPE giving a complete theoretical model of the process, which is based on fundamental results in the field of phase diagrams of the (Hg,Cd)Te the interdiffusion of Hg and Cd, gas-phase transport, etc. Using the results of this theoretical model, a production system for ISOVPE was designed, in which the deposition process, the high-temperature annealing for composition homogenization and the low-temperature annealing for the achievement of the desired epitaxial-layer doping are all performed in the same cycle. Finally, the basic electrical and optical characteristics of ISOVPE layers are analysed. It is shown that in applications of the fabrication of PV and MIS detector arrays a full affirmation of this technology can be expected.

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Die Interdiffusion der Chalkogene im System Hg(Te, Se)

Leute

Stratmann

1977

Ber Bunsenges Phys Chem

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Aus den mit einer Elektronenstrahl‐Mikrosonde aufgenommenen Konzentrationsprofilen für Se und Te wird der Interdiffusionskoeffizient der Chalkogene in der Halbleiterlegierung Hg(SexTe1‐x) als Funktion des Massenbruchs cHgSe und der Temperatur bestimmt. Die Messungen werden an undotierten Kristallen und an Hg‐ und Chalkogen‐gesättigten Kristallen durchgeführt. Die Abhängigkeit des Interdiffusionskoeffizienten von der Eigendotierung zeigt, daß die Diffusion über Chalkogenzwischengitterdefekte verläuft. Die Diskussion dieser Ergebnisse im Vergleich mit der neueren Literatur über die Hg‐Chalkogenide führt zu dem Schluß, daß es sich hier um neutrale Zwischengitterdefekte handelt. Die Beweglichkeit dieser Zwischengitterdefekte läßt im HgTe unerwartet hohe Abhängigkeit von der Eigendotierung erkennen. Die Aktivierungsentropie der Diffusion der Chalkogene hängt linear vom Quotienten aus Aktivierungsenthalpie und Solidustemperatur ab.

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Partial pressures of Hg(g) and Te2(g) in Hg-Te system from optical densities

Cited by 131 publications

References 13 publications

Thermodynamic description of the Hg–Te binary system

Thermodynamic description of the Hg–Te binary system

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Die Interdiffusion der Chalkogene im System Hg(Te, Se)

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