Partial epitaxial growth of Ni2Ge and NiGe on Ge(111)

Hsieh, Y. F.; Chen, L.J.; Marshall, E. D.; Lau, S. S.

doi:10.1016/0040-6090(88)90217-9

Cited by 33 publications

(16 citation statements)

References 15 publications

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“…Then the sample was annealed with rapid thermal annealing (RTA) in the ambient of N 2 to allow Ni thermal intrusion into Ge nanowire and subsequently form Ni x Ge/Ge heterostructures along the nanowire. In the previous study on the interfacial reactions of Ni thin film on Ge(111) substrate, the germanide phase formation sequence was found to be Ni 2 Ge and NiGe at increasing temperatures in the range of 160 • C to 600 • C [28]. Various annealing temperatures ranging from 400 • C to 700 • C were used in this study to optimize the formation of nanowire heterostructures.…”

Section: Resultsmentioning

confidence: 99%

“…On the other hand, the Ni/Ge ratio is about 2 : 1 in the other germanide region close to the Ni pad on the left, implying that the phase is Ni 2 Ge. It is also worth noting that the almost constant concentration of Ge along the heterostructure suggests Ni is the dominant diffusion species in this system[28].Figure 7(d) shows the lattice-resolved HRTEM image of the Ni x Ge/Ge heterostructure, clearly exhibiting two interfaces. The FFT patterns at the Ni 2 Ge, NiGe, and Ge regions are shown in Figures 7(e)-7(g), which help further confirm the germanide phases.…”

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confidence: 95%

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Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

Tang

Wang

Xiu

et al. 2011

Advances in Materials Science and Engineering

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We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire. In contrast to the formation of Ni2Ge/Ge/Ni2Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni2Ge with the confinement of Al2O3during annealing. A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the NixGe/Ge interface. Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel. Our Ge nanowire transistors have shown a high-performancep-type behavior with a high on/off ratio of 105and a field-effect hole mobility of 210 cm2/Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 95%

Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

Tang

Wang

Xiu

et al. 2011

Advances in Materials Science and Engineering

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“…Partial epitaxial growth of Ni 2 Ge and NiGe was also reported on Ge͑111͒ at annealing temperatures of 160 and 250°C, respectively. 16 In this letter, we report the epitaxial growth of NiGe on Ge͑001͒ using RDE at 300°C in an in situ ultrahigh vacuum transmission electron microscope ͑UHV-TEM͒. We observed epitaxial NiGe nucleation, island growth, and coalescence on Ge͑001͒ substrates.…”

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confidence: 90%

NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study

Nath

Soo

Boothroyd

et al. 2005

Applied Physics Letters

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We use an ultrahigh-vacuum transmission-electron microscopy, equipped with an electron-beam evaporator directed at a heating stage in the pole piece, to follow the reaction pathway of Ni on Ge(001) substrate at 300 °C. Using reactive deposition, we illustrate that epitaxial orthorhombic NiGe (a=5.381Å, b=3.428Å, and c=5.811Å) phase can be grown directly without the initial formation of metal-rich Ni2Ge phase. The epitaxial orientation of the NiGe islands and the underlying Ge(001) substrate were found to be NiGe(1¯01)∕∕Ge(001) and NiGe[010]∕∕Ge[110].

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“…The formation of ð ffiffiffi 3 p Â ffiffiffi 3 p ÞR30 , ð ffiffiffiffiffi ffi 19 p Â ffiffiffiffiffi ffi 19 p ÞR23:4 , and (1 × 1) − ring cluster phases of 2-D surface layers has been studied during the reaction of an ultra-thin film of Ni on a Si(111) substrate [12,[16][17][18][19]. The nucleation of a Ni 2 Ge thin film on Ge(111) has also been reported [20].…”

Section: Introductionmentioning

confidence: 96%

Structure determination of the ordered 3×3R30° phase of Ni2Si and Ni2Ge surface alloys on Ni(111) via low-energy electron diffraction

2015

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a b s t r a c tThe ð ffiffiffi 3 p Â ffiffiffi 3 p ÞR30 structures of 2-D nickel silicide and nickel germanide surface alloys on Ni(111) were investigated using quantitative low-energy electron diffraction analysis. The unit cells of the determined silicide and germanide structures contain two Ni atoms and one Si or Ge atom, corresponding to the chemical compositions Ni 2 Si and Ni 2 Ge, respectively. Both the Si and Ge atoms adopt substitutional face-centered cubic hollow sites to sit on the Ni(111) substrates, and the alloy surfaces exhibit a slight corrugation. The Ni\ \Si and Ni \ \Ge distances were 2.44 and 2.56 Å, respectively, and corresponded well to their respective empirical radii. It was also found that the Ni atoms in the second and third layers moved toward the Si or Ge atom sites from their bulk crystal positions. These results indicate rather strong interactions of the Ni atoms with both the Si and Ge atoms at the surface, leading to trapping of the Si and Ge atoms at the substitutional sites without diffusion into the bulk.

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Partial epitaxial growth of Ni2Ge and NiGe on Ge(111)

Cited by 33 publications

References 15 publications

Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study

Structure determination of the ordered 3×3R30° phase of Ni2Si and Ni2Ge surface alloys on Ni(111) via low-energy electron diffraction

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