Parametrized equations for excitons in quantum wires

Abstract

A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is performed in the framework of the variational method. The projections of the relative movement in a lateral plane (2D exciton) and along the free movement direction (1D exciton) are examined as limiting cases. Binding energies and spatial extensions of the exciton as functions of the size of the wire for both the ground and the first excited states are calculated in the case of GaAs/GaAlAs heterostructures for T-shaped and squared geometries. The method is applied to calculate the effects on the excitons induced by the application of crossed electric and magnetic fields. Comparison between quantum wells, T-wires and squared wires is given.

Combined Effects of Intense THz Laser Field and Applied Electric Field on Binding Energy of Exciton in GaAs/GaAlAs Finite Spherical Quantum Dot

“…QDs can be made into different forms such as cubic, spherical or cylindrical. On the base of these applications is the large dependence of exciton binding energy on different and adjustable parameters: the radius of the dot, the effective masses ratio of the carriers, the height and the shape of the confining potential caused by the matrix material in which the exciton is embedded [1][2][3][4][5]. Various external actions such as magnetic field [6], electric field [7,8] and hydrostatic pressure [9] were also considered and provide interesting properties.…”

Combined effects of intense THz laser field and applied electric field on binding energy of exciton in GaAs/ GaAlAs finite spherical quantum dot

“…C. A. Duque et al [3] were studied the combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells and found that the exciton binding energy is a decreasing function of the intense laser field parameter and of the electric field. On the base of these applications is the large dependence of exciton binding energy on different and adjustable parameters: the radius of the dot, the effective masses ratio of the carriers, the height and the shape of the confining potential caused by the matrix material in which the exciton is embedded [4][5]. Various external actions such as magnetic field [6], electric field [7][8] and hydrostatic pressure [9] were also considered and provide interesting properties.…”