The wide bandgap II-VI semiconductors have unique properties which allow the
possibility of suppressing the exciton-phonon scattering up to room
temperature in quantum well structures designed so that the exciton excitation
E1s→2s>hνLO. In particular, magnetic field and temperature
dependent measurements are used to study the exciton binding energies and to
investigate the exciton-LO phonon scattering processes of high quality ZnSe
quantum wells in MgS grown by MBE. The small inhomogeneous broadening of the
exciton transitions in these samples allows the observation of higher excited
exciton states. Due to the large difference in band gap between ZnSe and MgS
the exciton binding energy in a 5 nm well is found to be 43.9 meV, which is
the largest reported for this material system. The FWHM of the heavy hole
absorption transitions measured as a function of temperature shows that the
scattering of the excitons by the LO phonons is partially suppressed. These
results are compared with ZnS quantum wells where the exciton g-values have
been measured and the exciton binding energies have been deduced from the
exciton diamagnetic shifts. The results show the possibility of suppressing
exciton-LO phonon scattering in these structures.