Parametric review of microwave-based materials processing and its applications

Loharkar, Praveen Kumar; Ingle, Asha; Jhavar, Suyog

doi:10.1016/j.jmrt.2019.04.004

Cited by 82 publications

(26 citation statements)

References 74 publications

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“…(b) MW transmitters (low loss insulator materials such as Teflon and quartz); MW can penetrate through the material without any absorption, losses or heat generation. (c) MW absorbers (high loss insulator such as dielectric materials); they take up the energy from the MW field and get heated up rapidly [14,17,18]. So far, MW dielectric heating has been used for inorganic/organic syntheses [19][20][21] and metal nanoparticle synthesis [22,23].…”

Section: Preparation Of Silver Paste Pad For the Investigation Of Thementioning

confidence: 99%

“…After reaching around 150 °C, the temperature decreased. This decrease in temperature after the melting process would be because (i) melted balls were formed and the balls would reflect MW [14,17,18] and/or (ii) penetration depth decreased with an increase in conductivity [24], and eddy current was not generated. Table S1; △T(1, 0.5-20) = 0.2-0.8 °C for 1 W, 1.1-1.5 °C for 5 W, 1.7-2.6 °C for 10 W, 3.3-5.5 °C for 20 W, and 5.3-8.6 °C for 30 W, respectively.…”

Section: Induction Soldering System By Mwmentioning

confidence: 99%

“…Due to low eddy current, which is induced by low magnetic field intensity, the generation of Joule heat is also low. Therefore, the △T (1,(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) would be also low. Figure 6 and Table S1 show the temperature difference ( T) between initial temperature (T 0 ) and arrived temperature (T) of the samples by the induction soldering of MW and T, as defined in the below equation:…”

Section: Induction Soldering System By Mwmentioning

confidence: 99%

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Investigation of the Thermal Properties of Electrodes on the Film and Its Heating Behavior Induced by Microwave Irradiation in Mounting Processes

et al. 2020

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We have developed a novel microwave (MW) soldering system using a cylindrical single-mode TM110 MW cavity that spatially separates the electric fields at the top and bottom of the cavity and the magnetic field at the center of the cavity. This MW reactor system automatically detects the suitable resonance frequency and provides the optimum MW irradiation conditions in the cylindrical cavity via a power feedback loop. Furthermore, we investigated the temperature properties of electrodes by MW heating with the simulation of a magnetic field in the TM110 cavity toward the mounting of electronic components by MW heating. We also developed a short-time melting technology for solder paste on polyimide substrate using MW heating and succeeded in mounting a temperature sensor using the novel MW heating system without damaging the electronic components, electronic circuits, and the substrate.

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Section: Preparation Of Silver Paste Pad For the Investigation Of Thementioning

confidence: 99%

Section: Induction Soldering System By Mwmentioning

confidence: 99%

Section: Induction Soldering System By Mwmentioning

confidence: 99%

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Investigation of the Thermal Properties of Electrodes on the Film and Its Heating Behavior Induced by Microwave Irradiation in Mounting Processes

et al. 2020

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“…In present-day innovation, oxide-based flexible microwave composites are pulling in enormous significance in light of their exceptional physical properties and likely applications in the territory of microwave and nanotechnology 1 , 2 . Due to having high electrical resistivity and nano-scaled size alongside selective physical and substance structures, among others, the metal ferrites in their two structures; spinel ferrite (as mild) and hexaferrite (as hard) is a conspicuous applicant as electromagnetic materials 3 .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of Mg–Zn ferrite based flexible microwave composites and its application as SNG metamaterial

Rahman

Islam

Singh

et al. 2021

Sci Rep

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In this article, we propose SNG (single negative) metamaterial fabricated on Mg–Zn ferrite-based flexible microwave composites. Firstly, the flexible composites are synthesized by the sol-gel method having four different molecular compositions of MgxZn(1−x)Fe2O4, which are denoted as Mg20, Mg40, Mg60, and Mg80. The structural, morphological, and microwave properties of the synthesized flexible composites are analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and conventional dielectric assessment kit (DAK) to justify their possible application as dielectric substrate at microwave frequency regime. Thus the average grain size is found from 20 to 24 nm, and the dielectric constants are 6.01, 5.10, 4.19, and 3.28, as well as loss tangents, are 0.002, 0.004, 0.006, and 0.008 for the prepared Mg–Zn ferrites, i.e., Mg20, Mg40, Mg60, and Mg80 respectively. Besides, the prepared low-cost Mg–Zn ferrite composites exhibit high flexibility and lightweight, which makes them a potential candidate as a metamaterial substrate. Furthermore, a single negative (SNG) metamaterial unit cell is fabricated on the prepared, flexible microwave composites, and their essential electromagnetic behaviors are observed. Very good effective medium ratios (EMR) vales are obtained from 14.65 to 18.47, which ensure the compactness of the fabricated prototypes with a physical dimension of 8 × 6.5 mm2. Also, the proposed materials have shown better performances comparing with conventional FR4 and RO4533 materials, and they have covered S-, C-, X-, Ku-, and K-band of microwave frequency region. Thus, the prepared, flexible SNG metamaterials on MgxZn(1−x)Fe2O4 composites are suitable for microwave and flexible technologies.

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“…Microwave (MW) heating of materials is used for the synthesis, sintering, curing and heat treatment of ceramic, metal, polymer and composite materials. The main advantages of microwave processing are rapid heating, selectivity of heating and shortening of process times [9,10]. Susceptor assisted microwave annealing was proposed for fabrication of silicon based semiconductors in US20120196453A1 [11].…”

Section: Introductionmentioning

confidence: 99%