Parametric Analysis of CSDG MOSFET With La₂O₃ Gate Oxide: Based on Electrical Field Estimation

Abstract

Cylindrical Surrounding Double-Gate (CSDG) MOSFETs have been designed for a suitable CMOS replacement to diminish the power and area tradeoff. With these MOSFETs below 70 nm node for Semiconductor Industry Association (SIA) roadmap, the CMOS technology has excellent immunity to the Short Channel Effects (SCE) and better scalability. To reduce the SCE, the device was analyzed by improving the gate oxide thickness between the gate terminal and channel material and replacing the conventional Silicon dioxide layer with numerous high-ƙ dielectric materials. The gate oxide thickness is scalable so that it should have the same thickness as that of the Equivalent Oxide Thickness (EOT). This kind of novel structure shows improvement in the ON-state current and OFF-state current. The usage of the cylindrical surrounding double-gate and the high-ƙ dielectric in the oxide layer makes the MOSFET with improved stability and controllability. In this paper, the high-ƙ material is chosen in a way that it has been applied in the CSDG environment and the electrical field, electron densities have been analyzed. The semiconductor can exhibit various energy bands at the Fermi level, commonly referred to as valley. These kinds of valley semiconductors, which have several valleys are called multi-valley semiconductors. The current value in valley-1 is 2.41 mA/μm; it also drops to 62.14 % than valley-4, which has 6.38 mA/μm. However, valley-2 and valley-3 have intermediate values. The energy in the sub-band for the operating region of the source has been observed to be 19.12 % to the drain side which has the value of 0.041 eV at the terminal end. This shows the modeled CSDG MOSFET works well with the operating electric field created by the cylindrical capacitors constituted by the two different gate materials surrounding the substrate.

Testing and Analysis of MOSFET-Based Absorber Integrated Antenna for 5G/WiMAX/WLAN Applications

“…Equations (3) through (12) have been adopted from the existing literature [ 3 , 53 , 54 , 55 , 56 , 57 ]: …”

“…The MOSFET-based absorber schematic is presented in Figure 12 . In order to complete the rectification process while taking into account the ON and OFF states of the diodes and the potentials at each node of the rectifier, it has been demonstrated that the absorber is a combination of an RLC filter, an N-channel MOSFET, and a four-diode combination [ 55 , 56 , 57 ]. The function of the RLC filter, in this case, is to reduce the pulses at the output of the rectifier; this allows for maximum performance of the MOSFET device in the absorber.…”

Design of Cylindrical Surrounding Double-Gate MOSFET With Fabrication Steps Using a Layer-by-Layer Approach

“…The potential involved with the cylindrical structure has been affected by an imaginary capacitor and it is termed 'V'. This potential exists between the concentric layers of the cylindrical structure of the CSDG MOSFET [2][3][4][5][6]. The inner layer of the cylinder has a radius of rc 2 and the outer layer of the cylinder has a radius of rc 1 .…”

“…Silicon is still a suitable material to design complex nanostructures. The heterostructures were designed using the arbitrary alloy of semiconductors and found their applications in nano-photonics, wearable nanomaterial gadgets, and opto-electromechanics [2]. Further research reveals that the latest technology supports the patterning of the heterostructures with proper resolution and higher fidelity with precision.…”

G-Optrode Bio-Interfaces for Non-Invasive Optical Cell Stimulation: Design and Evaluation

“…Opto-genetics, or optical stimulus, is considerably more favorable to cells. Furthermore, an electro-optic stimulus needs large expression levels of foreign transmembrane ion-conducting proteins, implying that perhaps the researcher must modify a cell in order to influence its behavior [ 10 , 11 , 12 , 13 ]. Recent breakthroughs in nanotechnology have facilitated the development of integrated Nano-Particle Systems (NPS) on various substrates that have been shown to be a new generation platform for studying and controlling cellular function at the cell-device level.…”