Parametric action in transistors: Experiment

Gok, Ihsan Murat; Hyde, F.J.

doi:10.1049/piee.1966.0029

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1966

1968

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“…pump. 12 Reference to equation (2) shows that to achieve a negative resistance either the numerator or denominator must be negative. Either condition can be achieved, but as co 4 > co 2 it will be assumed that a negative numerator is the more likely.…”

Section: Discussionmentioning

confidence: 99%

Some observations on parametric action in transistor mixers

Gok

Hyde

1966

Radio Electron. Eng. UK

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Member)^Summary: Experimental results are presented for the type 2N502 microalloy graded-base transistor, which show the significance of parametric amplification at the collector-base diode in addition to normal mixing at the emitter-base diode. The latter is primarily due to the resistive non-linearity at the emitter, the parametric action at the collector being due to the non-linear junction capacitance.

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Section: Discussionmentioning

confidence: 99%

Some observations on parametric action in transistor mixers

Gok

Hyde

1966

Radio Electron. Eng. UK

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Semiconductor microwave generators

Hilsum¹

1968

J. Phys. D: Appl. Phys.

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An account is given of the four types of microwave generator made from semiconductors: the transistor, the varactor, the avalanche diode and the transferred electron diode. The design problems for each device are outlined. A more detailed discussion of the physical principles of avalanche diodes and transferred electron diodes is included. The two types of transferred electron device, the Gunn diode and the LSA diode, are contrasted. Finally, comparisons are made between the performances of all the generators, including power output and noise, and some indication is given of future prospects.

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Parametric action in transistors: Experiment

Cited by 2 publications

References 1 publication

Some observations on parametric action in transistor mixers

Some observations on parametric action in transistor mixers

Semiconductor microwave generators

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