Parameters extraction for the one-diode model of a solar cell

Sabadus, Andreea; Mihailetchi, Valentin D.; Paulescu, Marius

doi:10.1063/1.5017444

Cited by 15 publications

(14 citation statements)

References 7 publications

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“…The results presented in Table 1 show that the proposed models provide a good accuracy with the maximum error of 10% occurring for the calculation of Io which outperforms the accuracy presented in (Sabadus et al 2017). Although the work in (Sabadus et al 2017) provided better accuracy for Rs, it doesn't estimate any value for Rp. Moreover, parameter evaluations in (Sabadus et al 2017) depend on iterative Newton-Raphson method while the proposed models don't need any iteration.…”

Section: Simulation and Results Discussionmentioning

confidence: 92%

“…Since it has been proven that the one diode model represents the behavior of PV cells, thus in order to verify the accuracy of the developed expressions we compare them to the simulation results of the one-diode model. For the simulation to be realistic, the values of Io, Rs, n and Rp, are chosen to be close to those measured (the value of n has been estimated not measured) in (Sabadus et al 2017) as such we built the circuit in Fig. 5.…”

Section: Simulation and Results Discussionmentioning

confidence: 99%

“…For the short circuit condition, the output voltage V=0 and thus the voltage across the diode is equal to Isc × Rs which is a very small voltage to turn the diode fully on. The expression developed in (Sabadus et al 2017) to calculate Rs depending on Voc, Im, Vm and Isc is adopted in this paper since it depends only on the datasheet information and it shows a good accuracy when compared with Spice simulation results. , .< 1 6 .< =6 ; 5 , ;…”

Section: The Value Of Rsmentioning

confidence: 99%

“…Fig. 2 shows the schematic of this model which has been adopted by many researchers (Fesharaki et al 2011;Petreus et al 2011;and Sabadus et al 2017). The value of Rp is high for good cells, but for defective ones the value of Rp is usually low.…”

Section: Introductionmentioning

confidence: 99%

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PV Cell Parameters Modeling and Temperature Effect Analysis

Kabbani

Shaik

2021

Int. J. Renew. Energy Dev.

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With the wide acceptance of modeling a PV cell by a single diode, a series and parallel resistors; many researchers have discussed different mathematical forms and iterative techniques to extract the values of these model elements depending on the key parameters provided by the manufacturer datasheet. This paper avoids iterative techniques and obtains the values of the five parameters of the one diode model by developing closed form expressions. The maximum error produced by this technique is 10% when compared to the exact values of the one diode model circuit built by Spice. The 10% maximum error has occurred during the estimation of the reverse saturation current (Io) of the diode, nevertheless, it should be mentioned that even for this same parameter the model outperforms many iterative dependent works. Furthermore, this paper discusses the effect of temperature on the operation performance of PV cells. In particular, the temperature effect on the open circuit voltage, the short circuit current, the fill factor, the reverse saturation current, and the conversion efficiency was modeled and evaluated for different brand technologies

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Section: Simulation and Results Discussionmentioning

confidence: 92%

Section: Simulation and Results Discussionmentioning

confidence: 99%

Section: The Value Of Rsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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PV Cell Parameters Modeling and Temperature Effect Analysis

Kabbani

Shaik

2021

Int. J. Renew. Energy Dev.

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“…There are several analytical methods for determining the parameters of a solar cell from the data obtained through simulations [10][11][12][13][14]. However, to show the behavior of the p-G/n-Si solar cell, we used the data obtained in the above-mentioned simulations.…”

Section: Introductionmentioning

confidence: 99%

n-Graphene/p-Silicon-based Schottky junction solar cell, with very high power conversion efficiency

Wirth-Lima¹,

Alves-Sousa

Bezerra-Fraga

2020

SN Appl. Sci.

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We are presenting a solar cell consisting of electron-doped graphene (n-G)/holes-doped silicon (p-Si) Schottky junction, which provides a very high power conversion efficiency (PCE). The high PCE of our solar cell is caused by its high Schottky barrier height, which gives a very low value for the saturated reverse current (I 0), and consequently, occurs a very low value of the current flowing through the forward-biased Schottky junction (value tending to zero). Therefore, as all photogenerated current goes to the external circuit, the solar cell PCE, we are presenting is very high, which exceeds the Shockley-Quiesser limit. It is noteworthy that the n-G/p-Si solar cells with resistance series R s = 17.52 Ω, and R s = 10.00 Ω presented PCE values ≈ 22.55%, and ≈ 39.51%, respectively. Since there is no current going through the Schottky junction, that n-G/p-Si solar cell operates similarly to an electrochemical generator. To get the characteristic parameters of our solar cell, we used an analytical/numerical methodology.

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Modeling and simulation of high-efficiency GaAs PIN solar cells

et al. 2020

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Solar energy is the most convenient and reliable energy source among all renewable energy resources and an efficient photovoltaic device is required to convert this energy into utilizable energy. Different types of solar cells (SC) are commercially available. However, various parameters need to be optimized to get maximum efficiency from a SC. In this study we have presented a SC model in which dependence of quantum efficiency (QE) on various parameters has been investigated. The mobility of the carriers has been varied with wide range along with the carrier life time (LT). Results show that maximum efficiencies can be achieved up to 11.10% and 10.81% keeping the electron and hole mobility to be 1500 cm 2 V -1 s -1 and 300 cm 2 V -1 s -1 respectively with electron and hole carrier LT to be 3ns and 7ns respectively. The effect of surface recombination velocity (SRV) has also been brought under observation and the maximum efficiency is found to be 13.75% at electron and hole SRV equal to be 10 3 ms -1 . Results shows that the higher photovoltaic efficiencies can be achieved by increasing the mobility and carrier LT while decreasing the surface recombination velocities.

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Parameters extraction for the one-diode model of a solar cell

Cited by 15 publications

References 7 publications

PV Cell Parameters Modeling and Temperature Effect Analysis

PV Cell Parameters Modeling and Temperature Effect Analysis

n-Graphene/p-Silicon-based Schottky junction solar cell, with very high power conversion efficiency

Modeling and simulation of high-efficiency GaAs PIN solar cells

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