Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L‐BTBT induced GIDL
Anchal Thakur,
Rohit Dhiman,
Girish Wadhwa
et al.
Abstract:In the present work, we investigate the impact of structure dimensional parameters on the short channel effects which occurs especially below 20 nm regime particularly gate induced drain leakage (GIDL) current. Using technology computer aided design simulation (TCAD), we have examined the GIDL for SiGe as source/drain in NTJLFET. The structural dimensional parameters such as the nanotube thickness, core and outer gates thickness and gate electrode work function shows the significant impact on the band to band … Show more
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