Parameter identification of a double barrier memristive device

Solan, Enver; Ochs, Karlheinz

doi:10.1109/mwscas.2017.8053057

Cited by 6 publications

(4 citation statements)

References 11 publications

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“…This has allowed us to apply a live parameter fitting to obtain a suitable set of parameters for the considered device, cf. [33]. Now, transforming a given reference circuit into the wave digital domain means that the circuit must first be port-wise decomposed, where the following bijective mapping relation is applied to the resulting one-and multiports:…”

Section: B An Enhanced Memristor Modelmentioning

confidence: 99%

Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability

Beattie¹,

Quesada²,

Uhlmann³

et al. 2022

Preprint

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<p>The reliable and compact modeling of RRAM devices is crucial for supporting the development of novel technologies including them. The latter includes a wide range of applications, such as in-memory computing in neuromorphic networks or memristive logic. A major advantage of the considered HfO2- based RRAM devices is their CMOS-compatibility, which allows them to already be utilized in present applications. However, one problem with RRAMs is that their fabrication still leads to device variabilities. This makes it challenging to test the functionality of aspiring technologies utilizing them in an experimental fashion. This work is dedicated to the compact modeling and efficient emulation of 1T-1R RRAM devices. Specifically, we aim to provide an enhanced model, based on the Stanford-PKU model, that can be used on any simulation platform such as SPICE, VERLIOGA, or even standard ODE solvers to simulate multilevel capable RRAM devices. Furthermore, we provide an algorithmic model, based on the wave digital concept, which allows for emulating the considered RRAM device in real-time. Using the latter, we show the hysteresis of our enhanced model to exhibit astounding resemblance with real device measurements. </p>

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Section: B An Enhanced Memristor Modelmentioning

confidence: 99%

Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability

Beattie¹,

Quesada²,

Uhlmann³

et al. 2022

Preprint

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show abstract

“…The main benefit, among others, of emulators based on wave digital principles is the flexibility, which is manifested in two different ways: the flexibility of implementation the resulting algorithmic model on different platforms and the flexibility of the utilized memristive model itself. In addition, the parameters of the model can be adjusted during runtime, which leads to the possibility of live parameter fitting . With this, the device variability of RRAM cells can be adequately modeled in order to investigate the influence on the functionality of the overall circuit .…”

Section: Wave Digital Emulationmentioning

confidence: 99%

“…In particular, the wave digital algorithm is suitable in the context of optimization frameworks to figure out optimal model parameters with respect to measurements. A similar approach, where the wave digital model of a double barrier memristive device, has been exploited to figure out a justified model reduction has already been introduced . For higher voltage regions, the device changes from the HRS into the LRS, and therefore, the current‐voltage relation is given by the transistor in series.…”

Section: Wave Digital Emulationmentioning

confidence: 99%

“…The main benefit of the wave digital approach in the context of memristor emulators is its flexibility . Since the resulting algorithmic model can be implemented platform independent, reconfigurable emulators with the possibility for changing parameters during runtime can be achieved . With this, live parameter fitting can be done in order to figure out suitable parameters for a desired overall functionality of circuits including such devices.…”

Section: Introductionmentioning

confidence: 99%

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Wave digital model of a TiN/Ti/HfO₂/TiN memristor

Solan

Pérez

Michaelis

et al. 2019

Int J Numerical Modelling

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Memristors-nonlinear resistors with memory-are potential candidates for the utilization in self-organizing circuits. These novel elements need innovative technological developments in order to incorporate them into integrated electrical circuits. Alternatively, HfO 2 -based resistive random access memories (RRAMs) are complementary metal-oxide-semiconductor (CMOS) compatible and can also be interpreted as memristive devices. A fingerprint of such devices is their rapid change between the high-and low-resistance state. It is intended to exploit this feature in self-organizing circuits to achieve a desired overall functionality. But the huge device variabilities exacerbate preinvestigations of real circuits including such devices. To this end, a wave digital model based on a mathematical and a physical model of a hafnium oxide (HfO 2 ) memristor is introduced. Utilizing the wave digital approach yields a flexible, real-time capable algorithmic model, which is suitable for live parameter fitting in real circuits. Comparisons of the emulated hysteresis with measured data of RRAM cells verify the functionality of the presented emulator. The proposed method for emulating physical systems is not restricted to single devices. Indeed, whole subcircuits can be emulated before fabrication in order to save development costs. KEYWORDSmemristor emulator, memristive devices, resistive switching, wave digital filter Int J Numer Model. 2019;32:e2588.wileyonlinelibrary.com/journal/jnm

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Wave digital emulation of general memristors

Solan

Ochs

2018

Circuit Theory & Apps

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SummaryMemristive devices are nonlinear resistors with memory. Due to the memory effect, those devices are potential candidates for self‐organizing circuits capable of learning from environmental influences in the past. The complexity of single devices with memory in combination with the required huge number of these devices in circuits including them make preinvestigations based on simulations very inefficient and time‐consuming. Flexible and real‐time capable memristive emulators, which can directly be incorporated into real circuits, can overcome this problem.In our approach, we introduce a general memristor emulator based on wave digital principles. The proposed emulator is flexible, robust, efficient, and it preserves the passivity of the real device in a digital signal‐processing sense. All these properties result in a reusable emulator, independent of a particular application. This work lists the wave digital emulations of different models from ideal to extended memristors. As an example for an extended memristor, the wave digital emulation of a double barrier memristive device is demonstrated.

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Parameter identification of a double barrier memristive device

Cited by 6 publications

References 11 publications

Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability

Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability

Wave digital model of a TiN/Ti/HfO₂/TiN memristor

Wave digital emulation of general memristors

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Parameter identification of a double barrier memristive device

Cited by 6 publications

References 11 publications

Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability

Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices with Multilevel Capability

Wave digital model of a TiN/Ti/HfO2/TiN memristor

Wave digital emulation of general memristors

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Product

Resources

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Wave digital model of a TiN/Ti/HfO₂/TiN memristor