2015
DOI: 10.1039/c5cp03605d
|View full text |Cite
|
Sign up to set email alerts
|

Parameter-free continuous drift–diffusion models of amorphous organic semiconductors

Abstract: Continuous drift-diffusion models are routinely used to optimize organic semiconducting devices. Material properties are incorporated into these models via dependencies of diffusion constants, mobilities, and injection barriers on temperature, charge density, and external field. The respective expressions are often provided by the generic Gaussian disorder models, parametrized on experimental data. We show that this approach is limited by the fixed range of applicability of analytic expressions as well as appr… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
17
0

Year Published

2017
2017
2021
2021

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 18 publications
(18 citation statements)
references
References 50 publications
1
17
0
Order By: Relevance
“…Since QC calculations of the electronic structure must be performed only once, the use of ML reduces the computation time radically, while maintaining the prediction error small. [25][26][27][28][29][30][31][32][33][34][35][36] Charge hopping depends on the reorganization energy, [37] the transfer integral, [25,26] and molecular orbital energies. Benefiting from the rapid performance of ML, microscopic processes can be described accurately without the need for phenomenological approximations.…”
mentioning
confidence: 99%
“…Since QC calculations of the electronic structure must be performed only once, the use of ML reduces the computation time radically, while maintaining the prediction error small. [25][26][27][28][29][30][31][32][33][34][35][36] Charge hopping depends on the reorganization energy, [37] the transfer integral, [25,26] and molecular orbital energies. Benefiting from the rapid performance of ML, microscopic processes can be described accurately without the need for phenomenological approximations.…”
mentioning
confidence: 99%
“…Existing off-lattice models take into account all adjacent molecules within a certain radius [43,49]. Depending on the density of sites, this may cause a strong increase in simulation time.…”
Section: Voronoi Tessellationmentioning
confidence: 99%
“…Moreover, the major drawback of an equidistant spacing between lattice points in the cubic model is overcome with the use of the Voronoi set [48]. The local distribution of lattice sites can be imported from MD simulations using the center of masses of the molecules, providing a sophisticated multi-scale simulation method comparable to [42,43]. In the case of available quantum chemical simulations, the localized quantum state could directly be used as the input of the sites.…”
Section: Voronoi Tessellationmentioning
confidence: 99%
See 2 more Smart Citations