Parameter extraction for small‐signal model of GaN HEMTs on SiC substrates based on modified firefly algorithm

Abstract

In this article, an improved firefly algorithm is proposed to extract the parameters of the small signal model of GaN HEMTs on SiC substrates. First, the initial values of the parameters are extracted directly by pinch-off, unbiased cold S-parameters and hot S-parameters. Second, an improved firefly algorithm is proposed to optimize parameters. Finally, in order to verify this method, the performances of traditional algorithm are compared with modified firefly algorithm in convergence speed, execution time, and accuracy, which shows that this proposed method is more suitable for the extraction of highdimensional parameters model.